Theoretical study of Ga-based nanowires and the interaction of Ga with single-wall carbon nanotubes

Date
2004
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Source Title
Physical Review B - Condensed Matter and Materials Physics
Print ISSN
0163-1829
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Publisher
American Physical Society
Volume
70
Issue
15
Pages
155305-1 - 155305-7
Language
English
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Abstract

Gallium displays physical properties which can make it a potential element to produce metallic nanowires and high-conducting interconnects in nanoelectronics. Using first-principles pseudopotential plane method we showed that Ga can form stable metallic linear and zigzag monatomic chain structures. The interaction between individual Ga atom and single-wall carbon nanotube (SWNT) leads to a chemisorption bond involving charge transfer. Doping of SWNT with Ga atom gives rise to donor states. Owing to a significant interaction between individual Ga atom and SWNT, continuous Ga coverage of the tube can be achieved. Ga nanowires produced by the coating of carbon nanotube templates are found to be stable and high conducting.

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Published Version (Please cite this version)