Germanium for high performance MOSFETs and optical interconnects

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage12en_US
dc.citation.spage3en_US
dc.contributor.authorSaraswat, K. C.en_US
dc.contributor.authorKim, D.en_US
dc.contributor.authorKrishnamohan, T.en_US
dc.contributor.authorKuzum, D.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorPethe, A.en_US
dc.contributor.authorYu H.-Y.en_US
dc.coverage.spatialHonolulu, HI, United States
dc.date.accessioned2016-02-08T11:35:05Z
dc.date.available2016-02-08T11:35:05Z
dc.date.issued2008-10en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 12-17 Oct. 2008
dc.descriptionConference name: 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
dc.description.abstractIt is believed that to continue the scaling of silicon CMOS innovative device structures and new materials have to be created in order to continue the historic progress in information processing and transmission. Recently germanium has emerged as a viable candidate to augment Si for CMOS and optoelectronic applications. In this work we will first review recent results on growth of thin and thick films of Ge on Si, technology for appropriate cleaning of Ge, surface passivation using high-κ dielectrics, and metal induced crystallization of amorphous Ge and dopant activation. Next we will review application of Ge for high performance MOSFETs. Innovative Si/Ge MOS heterostructures will be described with high on current and low off currents. Finally we will describe optical detectors and modulators for on-chip and off-chip interconnect. Successful integration of Ge on Si should allow continued scaling of silicon CMOS to below 22 nm node. ©The Electrochemical Society.en_US
dc.identifier.doi10.1149/1.2986748en_US
dc.identifier.issn1938-5862
dc.identifier.urihttp://hdl.handle.net/11693/26763
dc.language.isoEnglishen_US
dc.relation.isversionofhttp://dx.doi.org/10.1149/1.2986748en_US
dc.source.titleECS Transactionsen_US
dc.subjectDevice structuresen_US
dc.subjectDopant activationsen_US
dc.subjectHeterostructuresen_US
dc.subjectInformation processingen_US
dc.subjectMetal induced crystallizationsen_US
dc.subjectMOSFETsen_US
dc.subjectNew materialsen_US
dc.subjectOff chipsen_US
dc.subjectOff currentsen_US
dc.subjectOn chipsen_US
dc.subjectOn currentsen_US
dc.subjectOptical detectorsen_US
dc.subjectOpto-electronic applicationsen_US
dc.subjectSi/geen_US
dc.subjectSilicon cmosen_US
dc.subjectSurface passivationsen_US
dc.subjectThin and thick filmsen_US
dc.subjectAmorphous filmsen_US
dc.subjectAmorphous siliconen_US
dc.subjectGermaniumen_US
dc.subjectMetal cleaningen_US
dc.subjectMOSFET devicesen_US
dc.subjectOptical interconnectsen_US
dc.subjectPassivationen_US
dc.subjectSemiconducting germanium compoundsen_US
dc.subjectSiliconen_US
dc.subjectSilicon alloysen_US
dc.subjectSurface cleaningen_US
dc.subjectThick filmsen_US
dc.subjectSemiconducting silicon compoundsen_US
dc.titleGermanium for high performance MOSFETs and optical interconnectsen_US
dc.typeConference Paperen_US

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