Swanepoel method for AlInN/AlN HEMTs

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage9973en_US
dc.citation.issueNumber13en_US
dc.citation.spage9969en_US
dc.citation.volumeNumber31en_US
dc.contributor.authorAkpınar, Ö.
dc.contributor.authorBilgili, A. K.
dc.contributor.authorBaşköşe, Ü. C.
dc.contributor.authorÖztürk, M. K.
dc.contributor.authorÖzçelik, S.
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2021-02-10T13:23:55Z
dc.date.available2021-02-10T13:23:55Z
dc.date.issued2020
dc.departmentDepartment of Physicsen_US
dc.description.abstractIn this study, AlInN/AlN high electron mobility transistor (HEMT) structure is grown on c-oriented sapphire substrate using metal organic chemical vapor deposition method. Optical properties of the structure are investigated by photoluminescence (PL) and ultraviolet (UV–Vis.) spectras. According to PL results, direct bandgap of AlN is determined around 2.80 eV. In UV–Vis. spectra it is seen that conduction of AlInN layer starts at 360 nm. Swanepoel envelope method is applied on transmission spectra and some optical properties such as refractive index (n), film thickness (t), absorption coefficient (α), and extinction coefficient (k) are determined. Forbidden energy bandgap is determined again from Tau method and it is compared with the value gained from PL spectra. This study is a rare one that presents optical properties of HEMTs using Swanepoel and Tau methods. In addition to this, it helps estimating how optical properties of HEMTs effect electrical properties.en_US
dc.identifier.doi10.1007/s10854-020-03590-6en_US
dc.identifier.issn0957-4522
dc.identifier.urihttp://hdl.handle.net/11693/55050
dc.language.isoEnglishen_US
dc.publisherSpringeren_US
dc.relation.isversionofhttps://dx.doi.org/10.1007/s10854-020-03590-6en_US
dc.source.titleJournal of Materials Science: Materials in Electronicsen_US
dc.titleSwanepoel method for AlInN/AlN HEMTsen_US
dc.typeReviewen_US

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