Infrared photoluminescence from TlGaS2 layered single crystals

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage806en_US
dc.citation.issueNumber9en_US
dc.citation.spage800en_US
dc.citation.volumeNumber39en_US
dc.contributor.authorYuksek, N. S.en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorOzkan, H.en_US
dc.contributor.authorAcikgoz, M.en_US
dc.date.accessioned2016-02-08T10:26:08Z
dc.date.available2016-02-08T10:26:08Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm-2. The proposed energy-level diagram allows us to interpret the recombination processes in TlGaS2 crystals.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:26:08Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004en
dc.identifier.doi10.1002/crat.200310256en_US
dc.identifier.eissn1521-4079
dc.identifier.issn0232-1300
dc.identifier.urihttp://hdl.handle.net/11693/24229
dc.language.isoEnglishen_US
dc.publisherWiley - V C H Verlag GmbH & Co.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/crat.200310256en_US
dc.source.titleCrystal Research and Technologyen_US
dc.subjectDefect levelsen_US
dc.subjectLayered crystalsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSemiconductorsen_US
dc.subjectTlGaS 2en_US
dc.subjectActivation energyen_US
dc.subjectElectron energy levelsen_US
dc.subjectLight emissionen_US
dc.subjectMathematical modelsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectPhotonsen_US
dc.subjectQuenchingen_US
dc.subjectRaman scatteringen_US
dc.subjectStacking faultsen_US
dc.subjectTitanium compoundsen_US
dc.subjectInfrared photoluminescenceen_US
dc.subjectRecombination methodsen_US
dc.subjectThermally stimulated currents (TSC)en_US
dc.subjectSingle crystalsen_US
dc.titleInfrared photoluminescence from TlGaS2 layered single crystalsen_US
dc.typeArticleen_US

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