Low leakage current operation of carbon nanotube network thin-film transistors at 100 degree celsius

Date
2011
Authors
Ozturk, S.
Aktas O.
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Advanced Science Letters
Print ISSN
19366612
Electronic ISSN
Publisher
Volume
4
Issue
11-12
Pages
3629 - 3632
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Series
Abstract

In this work we present the elevated temperature operation of carbon nanotube thin film transistors up to 100 °C in air ambient. It is demonstrated that for semiconducting nanotubes the OFF current leakage does not increase and the high ON/OFF ratio of transistors consisting of semiconducting nanotubes is preserved up to 100 °C. In addition, we investigate the factors affecting the operation of carbon nanotube transistors at high temperature for a range of source-to-drain spacing and metallic tube contents. The influence of change in tube-tube and tube-metal contact resistance on the device characteristics at high temperature is demonstrated. © 2011 American Scientific Publishers.

Course
Other identifiers
Book Title
Keywords
Carbon Nanotube, High Temperature Operation, Thin-Film Transistor
Citation
Published Version (Please cite this version)