Temperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity study

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage506en_US
dc.citation.issueNumber2en_US
dc.citation.spage501en_US
dc.citation.volumeNumber45en_US
dc.contributor.authorYuksek, N. S.en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorOzkan, H.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2016-02-08T10:26:24Z
dc.date.available2016-02-08T10:26:24Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractThe temperature dependence (16 - 300 K) of unpolarized Raman spectra from TIGaS2 layered crystals was measured in the frequency range of 10 - 400 cm-1. The analysis of the experimental data showed that the temperature dependencies of the phonon frequencies and linewidths were well described by considering the contributions from thermal expansion and lattice anharmonicity. The anharmonic contribution (phonon-phonon coupling) was found to be due to three-phonon processes. The present work demonstrates that the interlayer Raman mode at 42.6 cm-1 shifts toward high frequency as the temperature is raised from 16 to 300 K.en_US
dc.identifier.issn0374-4884
dc.identifier.urihttp://hdl.handle.net/11693/24253
dc.language.isoEnglishen_US
dc.publisherKorean Physical Societyen_US
dc.source.titleJournal of the Korean Physical Societyen_US
dc.subjectAnharmonicityen_US
dc.subjectLayered crystalsen_US
dc.subjectPhonon-phonon couplingen_US
dc.subjectTIGaS2en_US
dc.titleTemperature dependence of Raman-active modes of TIGaS2 layered crystals: An anharmonicity studyen_US
dc.typeArticleen_US

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