Modeling of semiconductor devices based on quantum wells: quantum cascade laser as an example

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buir.advisorGülseren, Oğuz
dc.contributor.authorAbbasian, Hamed
dc.date.accessioned2018-03-02T14:02:05Z
dc.date.available2018-03-02T14:02:05Z
dc.date.copyright2018-02
dc.date.issued2018-02
dc.date.submitted2018-03-02
dc.departmentDepartment of Physicsen_US
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionThesis (M.S.): Bilkent University, Department of Physics, İhsan Doğramacı Bilkent University, 2018.en_US
dc.descriptionIncludes bibliographical references (leaves 40-43).en_US
dc.description.abstractIt has been two decades since the quantum-cascade lasers (QCLs) have emerged in 1994 for the first time. As time goes on, QCLs reach to higher points scientifically and economically and the usage of QCLs devices continually grows in optoelectronic device market because of their potential applications in various areas in mid- and far-infrared regions. Moreover, their performance is still improving. QCLs lase based on electron transition between intersubbands and tunneling through potential barriers where electron transition causes photon emission. This takes place in conduction band; that is why QCLs are considered as unipolar semiconductor lasers. The frequencies of emitted photons depend on the location of the allowed energy levels which can be controlled by carefully choosing consecutive wells and barriers with suitable widths. In the present thesis, the transfer matrix method is employed to obtain transmission coe cient and wave functions of electron inside an arbitrary potential profile which is crucial for characterizing semiconductor devices based on quantum well. The obtained wave functions are used to get quantities necessary for characterizing QCL resulted from the potential profile.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityby Hamed Abbasian.en_US
dc.format.extentxi, 43 leaves : charts ; 30 cmen_US
dc.identifier.itemidB157538
dc.identifier.urihttp://hdl.handle.net/11693/35995
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectQuantum Cascade Laseren_US
dc.subjectTransfer Matrix Methoden_US
dc.subjectNanostructured Deviceen_US
dc.subjectQuantum Wellen_US
dc.titleModeling of semiconductor devices based on quantum wells: quantum cascade laser as an exampleen_US
dc.title.alternativeKuvantum kuyularına dayanan yarı iletken aygıtların modellenmesi: kuantum ardıl lazer örneğien_US
dc.typeThesisen_US

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