Al(x)Ga(1-x)As/GaAs graded index separate confinement heterostructure single quantum well lasers

Abstract

"Stimulated emission of photons could be produced in semiconductors by recombination of carriers injected across a p-n junction This idea was first suggested by Basov et al} in 1961. Soon afterwards diode lasers were first demonstrated at cryogenic temperatures in pulsed operation in 1962 by separate groups in US.^"® Until the first use of heterostructures in diode lasers^ in 1969, advances in the diode laser area were not as good as was expected. New era of the diode Icisers begin with use of the heterostructures in laser diode technology which allowed them to run at room temperatures in continuous wave operations. Also, introduction of MBE and LPE techniques in crystal growth area supplied the forecoming materials and enabled growing of nanocrystal layers for semiconductor laser diode applications. Reaching to reliable, compact and an efficient components for applications is the major factor which forces the laser diode designs to maturity. In this work, ridge type Single Quantum Well Graded Index Separately Confined Heterostructure lгıser diodes which were made by reactive ion etching in CCI2F2 and lift-off of low temperature PECVD SİO2, is taken from its crystal growth aspects through design and fabrication steps to its characterization.