Low dielectric constant Parylene-F-like films for intermetal dielectric applications

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage608en_US
dc.citation.issueNumber4en_US
dc.citation.spage606en_US
dc.citation.volumeNumber74en_US
dc.contributor.authorHanyaloglu, B.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorOye, M.en_US
dc.contributor.authorAydi, E. S.en_US
dc.date.accessioned2015-07-28T11:56:53Z
dc.date.available2015-07-28T11:56:53Z
dc.date.issued1999en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe report on the dielectric properties and thermal stability of thin polymer films that art: suitable candidates for replacing silicon dioxide as the intermetal dielectric material in integrated circuits. Parylene-F-Iike films, (-CF2-C6H4-CF2-)(n), were produced by plasma deposition from a mixture of Ar and 1,4-bis(trifluoromethyl)benzene (CF3-C6H4-CF3) discharges and characterized using infrared absorption spectroscopy, spectroscopic ellipsometry, and capacitance measurements. The dielectric constant and the magnitude of the electronic and ionic contributions to the dielectric constant were determined through capacitance measurements and Kramers-Kronig analysis of the infrared absorption data. The film's dielectric constant ranges between 2 and 2.6 depending on the deposition conditions and the largest contribution to the dielectric constant is electronic. The films deposited at 300 degrees C are stable above 400 degrees C and further optimization could push this limit to as high as 500 degrees C. (C) 1999 American Institute of Physics.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:56:53Z (GMT). No. of bitstreams: 1 10.1063-1.123160.pdf: 362186 bytes, checksum: 4c6c6ddb58e070bf68158472424dcee2 (MD5)en
dc.identifier.doi10.1063/1.123160en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11116
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/ 10.1063/1.123160en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectChemical-vapor-depositionen_US
dc.subjectInterlayer Dielectricsen_US
dc.titleLow dielectric constant Parylene-F-like films for intermetal dielectric applicationsen_US
dc.typeArticleen_US

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