XPS investigation of a Si-diode in operation

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10.1039-c2ay25901j.pdf (243.5 KB)

Date

2012

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Source Title

Analytical Methods

Print ISSN

1759-9660

Electronic ISSN

1759-9679

Publisher

Royal Society of Chemistry

Volume

4

Issue

11

Pages

3527 - 3530

Language

English

Type

Article

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Abstract

X-ray photoelectron spectroscopy (XPS) is utilized to investigate a Si-diode during its operation under both forward and reverse bias. The technique traces chemical and location specified surface potential variations as shifts of the peak positions with respect to the magnitude as well as the polarity of the applied voltage bias, which enables one to separate the dopant dependent shifts from those of the chemical ones.

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Keywords

Ray Photoelectron-spectroscopy , Cdse Nanoparticle Films , Operando Raman-gc , P-n-junctions , Catalyst , Oxidation , Monolayer , Substrate

Citation

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http://hdl.handle.net/11693/12995

item.page.isversionof

http://dx.doi.org/10.1039/c2ay25901j

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Department of Chemistry