Excited-state dynamics and nonlinear optical response of Ge nanocystals embedded in silica matrix

buir.contributor.authorAydınlı, Atilla
dc.citation.epage181901-3en_US
dc.citation.issueNumber18en_US
dc.citation.spage181901-1en_US
dc.citation.volumeNumber88en_US
dc.contributor.authorRazzani, L.en_US
dc.contributor.authorGnoli, A.en_US
dc.contributor.authorRighini, M.en_US
dc.contributor.authorDana, A.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2015-07-28T11:58:04Z
dc.date.available2015-07-28T11:58:04Z
dc.date.issued2006-05-01en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractWe use a dedicated Z-scan setup, arranged to account for cumulative effects, to study the nonlinear optical response of Ge nanocrystals embedded in silica matrix. Samples are prepared with plasma-enchanced chemical-vapor deposition and post-thermal annealing. We measure a third-order nonlinear refraction coefficient of gamma=1x10(-16) m(2)/W. The nonlinear absorption shows an intensity-independent coefficient of beta=4x10(-10) m/W related to fast processes. In addition, we measure a second beta component around 10(-9) m/W with a relaxation time of 300 mu s that rises linearly with the laser intensity. We associate its origin to the absorption of excited carriers from a surface-defect state with a long depopulation time.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T11:58:04Z (GMT). No. of bitstreams: 1 10.1063-1.2201550.pdf: 185200 bytes, checksum: 919cb9c8bb4ea320f47fb37b9f061ddf (MD5)en
dc.identifier.doi10.1063/1.2201550en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/11561
dc.language.isoEnglishen_US
dc.publisherA I P Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2201550en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectGermanium Nanocrystalsen_US
dc.titleExcited-state dynamics and nonlinear optical response of Ge nanocystals embedded in silica matrixen_US
dc.typeArticleen_US

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