Electrical properties from photoinduced charging on Cd-doped (100) surfaces of CuInSe2 epitaxial thin films

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buir.contributor.authorSüzer, Şefik
dc.citation.epage031201-8en_US
dc.citation.issueNumber3en_US
dc.citation.spage031201-1en_US
dc.citation.volumeNumber34en_US
dc.contributor.authorJohnson, N.en_US
dc.contributor.authorAydogan, P.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorRockett, A.en_US
dc.date.accessioned2018-04-12T11:10:24Z
dc.date.available2018-04-12T11:10:24Z
dc.date.issued2016en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractThe photoresponse of Cd-doped CuInSe2 (CIS) epitaxial thin films on GaAs(100) was studied using x-ray photoelectron spectroscopy under illumination from a 532 nm laser between sample temperatures of 28-260 °C. The initial, air-exposed surface shows little to no photoresponse in the photoelectron binding energies, the Auger electron kinetic energies or peak shapes. Heating between 50 and 130 °C in the analysis chamber results in enhanced n-type doping at the surface and an increased light-induced binding energy shift, the magnitude of which persists when the samples are cooled to room temperature from 130 °C but which disappears when cooling from 260 °C. Extra negative charge trapped on the Cu and Se atoms indicates deep trap states that dissociate after cooling from 260 °C. Analysis of the Cd modified Auger parameter under illumination gives experimental verification of electron charging on Cd atoms thought to be shallow donors in CIS. The electron charging under illumination disappears at 130 °C but occurs again when the sample is cooled to room temperature.en_US
dc.identifier.doi10.1116/1.4945105en_US
dc.identifier.eissn1944-2807
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/37330
dc.language.isoEnglishen_US
dc.publisherAVS Science and Technology Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1116/1.4945105en_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.subjectAuger electron spectroscopyen_US
dc.subjectAugersen_US
dc.subjectBinding energyen_US
dc.subjectBinsen_US
dc.subjectKinetic energyen_US
dc.subjectPhotoelectronsen_US
dc.subjectPhotonsen_US
dc.subjectSemiconducting selenium compoundsen_US
dc.subjectSemiconductor dopingen_US
dc.subjectThin filmsen_US
dc.subjectAir-exposed surfacesen_US
dc.subjectAuger parametersen_US
dc.subjectBinding energy shiftsen_US
dc.subjectElectron chargingen_US
dc.subjectEpitaxial thin filmsen_US
dc.subjectExperimental verificationen_US
dc.subjectPhotoelectron binding energyen_US
dc.subjectSample temperatureen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleElectrical properties from photoinduced charging on Cd-doped (100) surfaces of CuInSe2 epitaxial thin filmsen_US
dc.typeArticleen_US

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