Fabrication of high-speed resonant cavity enhanced schottky photodiodes
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 674 | en_US |
dc.citation.issueNumber | 5 | en_US |
dc.citation.spage | 672 | en_US |
dc.citation.volumeNumber | 9 | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.contributor.author | Islam, M. S. | en_US |
dc.contributor.author | Onat, B. | en_US |
dc.contributor.author | Gökkavas, M. | en_US |
dc.contributor.author | Aytür, O. | en_US |
dc.contributor.author | Tuttle, G. | en_US |
dc.contributor.author | Towe, E. | en_US |
dc.contributor.author | Henderson, R. H. | en_US |
dc.contributor.author | Ünlü, M. S. | en_US |
dc.date.accessioned | 2016-02-08T10:48:17Z | |
dc.date.available | 2016-02-08T10:48:17Z | |
dc.date.issued | 1997-05 | en_US |
dc.department | Department of Physics | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.description.abstract | We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:48:17Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 1997 | en |
dc.identifier.doi | 10.1109/68.588199 | en_US |
dc.identifier.issn | 1041-1135 | |
dc.identifier.uri | http://hdl.handle.net/11693/25634 | |
dc.language.iso | English | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/68.588199 | en_US |
dc.source.title | IEEE Photonics Technology Letters | en_US |
dc.subject | High-speed circuits/devices | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Photodiodes | en_US |
dc.subject | Resonant caity enhancement | en_US |
dc.subject | Schottky diodes | en_US |
dc.subject | Bandwidth | en_US |
dc.subject | Electric contacts | en_US |
dc.subject | Frequency response | en_US |
dc.subject | Integrated optoelectronics | en_US |
dc.subject | Mirrors | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.subject | Semiconducting aluminum compounds | en_US |
dc.subject | Semiconducting gallium arsenide | en_US |
dc.subject | Semiconductor device manufacture | en_US |
dc.subject | Semiconductor device testing | en_US |
dc.subject | Full width at half maximum (FWHM) | en_US |
dc.subject | Resonant cavity enhanced (RCE) Schottky photodiodes | en_US |
dc.subject | Schottky metal contacts | en_US |
dc.subject | Photodiodes | en_US |
dc.title | Fabrication of high-speed resonant cavity enhanced schottky photodiodes | en_US |
dc.type | Article | en_US |
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