Low-temperature photoluminescence spectra of layered semiconductor TlGaS2

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage24en_US
dc.citation.issueNumber1en_US
dc.citation.spage21en_US
dc.citation.volumeNumber105en_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorBek, A.en_US
dc.contributor.authorYilmaz, I.en_US
dc.date.accessioned2016-02-08T10:45:55Z
dc.date.available2016-02-08T10:45:55Z
dc.date.issued1998en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractPhotoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 × 10-2 to 9 W cm-2. The A- and B-bands were found to be due to radiative transitions from the deep donor levels located at 0.362 and 0.738 eV below the bottom of the conduction band to the shallow acceptor levels at 0.005 and 0.085 eV located above the top of the valence band, respectively. The proposed energy-level diagram permits us to interpret the recombination processes in TlGaS2 layered single crystals. © 1997 Elsevier Science Ltd.en_US
dc.identifier.doi10.1016/S0038-1098(97)10027-8en_US
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/25510
dc.language.isoEnglishen_US
dc.publisherPergamon Pressen_US
dc.relation.isversionofhttps://doi.org/10.1016/S0038-1098(97)10027-8en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectA. Semiconductorsen_US
dc.subjectD. Optical propertiesen_US
dc.subjectE. Luminescenceen_US
dc.subjectBand structureen_US
dc.subjectElectron energy levelsen_US
dc.subjectElectron transitionsen_US
dc.subjectLow temperature effectsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectSingle crystalsen_US
dc.subjectSpectrum analysisen_US
dc.subjectExcitation laser densityen_US
dc.subjectLayered semiconductorsen_US
dc.subjectRadiative transitionsen_US
dc.subjectRecombinationen_US
dc.subjectThallium gallium arsenideen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.titleLow-temperature photoluminescence spectra of layered semiconductor TlGaS2en_US
dc.typeArticleen_US

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