Low-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasma

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buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage4059en_US
dc.citation.issueNumber12en_US
dc.citation.spage4052en_US
dc.citation.volumeNumber97en_US
dc.contributor.authorHaider A.en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorGoldenberg, E.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2015-07-28T12:02:51Z
dc.date.available2015-07-28T12:02:51Z
dc.date.issued2014en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractHexagonal boron nitride (hBN) thin films were deposited on silicon and quartz substrates using sequential exposures of triethylboron and N 2 /H 2 plasma in a hollow-cathode plasma- assisted atomic layer deposition reactor at low temperatures ( ≤ 450 ° C). A non-saturating film deposition rate was observed for substrate temperatures above 250 ° C. BN films were charac- terized for their chemical composition, crystallinity, surface morphology, and optical properties. X-ray photoelectron spec- troscopy (XPS) depicted the peaks of boron, nitrogen, carbon, and oxygen at the film surface. B 1s and N 1s high-resolution XPS spectra confirmed the presence of BN with peaks located at 190.8 and 398.3 eV, respectively. As deposited films were polycrystalline, single-phase hBN irrespective of the deposition temperature. Absorption spectra exhibited an optical band edge at ~ 5.25 eV and an optical transmittance greater than 90% in the visible region of the spectrum. Refractive index of the hBN film deposited at 450 ° C was 1.60 at 550 nm, which increased to 1.64 after postdeposition annealing at 800 ° C for 30 min. These results represent the first demonstration of hBN deposi- tion using low-temperature hollow-cathode plasma-assisted sequential deposition technique. © 2014 The American Ceramic Society.en_US
dc.identifier.doi10.1111/jace.13213en_US
dc.identifier.issn0002-7820
dc.identifier.urihttp://hdl.handle.net/11693/12754
dc.language.isoEnglishen_US
dc.publisherWiley-Blackwell Publishing, Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1111/jace.13213en_US
dc.source.titleJournal of the American Ceramic Societyen_US
dc.subjectAtomic Layer Depositionen_US
dc.subjectChemical-vapor-depositionen_US
dc.subjectThin-filmsen_US
dc.subjectMechanical-propertiesen_US
dc.subjectOptical-propertiesen_US
dc.subjectPressureen_US
dc.subjectGraphiteen_US
dc.subjectDiamonden_US
dc.subjectBnen_US
dc.subjectCompositesen_US
dc.titleLow-Temperature Deposition of Hexagonal Boron Nitride via Sequential Injection of Triethylboron and N2/H2 Plasmaen_US
dc.typeArticleen_US

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