Trap levels in layered semiconductor Ga2SeS

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage861en_US
dc.citation.issueNumber12en_US
dc.citation.spage857en_US
dc.citation.volumeNumber132en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorGasanly, N. M.en_US
dc.contributor.authorAytekin, S.en_US
dc.date.accessioned2016-02-08T10:25:17Z
dc.date.available2016-02-08T10:25:17Z
dc.date.issued2004en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractTrap levels in nominally undoped Ga2SeS layered crystals have been characterized by thermally stimulated current (TSC) measurements. During the measurements, current was allowed to flow along the c-axis of the crystals in the temperature range of 10-300 K. Two distinct TSC peaks were observed in the spectra, deconvolution of which yielded three peaks. The results are analyzed by curve fitting, peak shape and initial rise methods. They all seem to be in good agreement with each other. The activation energies of three trapping centers in Ga2SeS are found to be 72, 100 and 150 meV. The capture cross section of these traps are 6.7×10-23, 1.8×10-23 and 2.8×10-22cm2 with concentrations of 1.3×1012, 5.4×1012 and 4.2×1012cm-3, respectively.en_US
dc.identifier.doi10.1016/j.ssc.2004.08.028en_US
dc.identifier.eissn1879-2766
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/11693/24182
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.ssc.2004.08.028en_US
dc.source.titleSolid State Communicationsen_US
dc.subjectA. Chalcogenidesen_US
dc.subjectA. Semiconductorsen_US
dc.subjectC. Defectsen_US
dc.subjectD. Electrical propertiesen_US
dc.subjectAnisotropyen_US
dc.subjectCrystal growthen_US
dc.subjectDegradationen_US
dc.subjectMathematical modelsen_US
dc.subjectPhotoconductivityen_US
dc.subjectVan der Waals forcesen_US
dc.subjectDefect levelsen_US
dc.subjectSemiconductor crystalsen_US
dc.subjectThermally stimulated currents (TSC)en_US
dc.subjectSemiconducting gallium compoundsen_US
dc.titleTrap levels in layered semiconductor Ga2SeSen_US
dc.typeArticleen_US

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