Stress evolution of Ge nanocrystals in dielectric matrices

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage14en_US
dc.citation.issueNumber18en_US
dc.citation.spage1en_US
dc.citation.volumeNumber29en_US
dc.contributor.authorBahariqushchi, R.en_US
dc.contributor.authorRaciti, R.en_US
dc.contributor.authorKasapoǧlu, A. E.en_US
dc.contributor.authorGür, E.en_US
dc.contributor.authorSezen, M.en_US
dc.contributor.authorKalay, E.en_US
dc.contributor.authorMirabella, S.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.date.accessioned2019-02-21T16:03:33Z
dc.date.available2019-02-21T16:03:33Z
dc.date.issued2018en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractGermanium nanocrystals (Ge NCs) embedded in single and multilayer silicon oxide and silicon nitride matrices have been synthesized using plasma enhanced chemical vapor deposition followed by conventional furnace annealing or rapid thermal processing in N2 ambient. Compositions of the films were determined by Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy. The formation of NCs under suitable process conditions was observed with high resolution transmission electron microscope micrographs and Raman spectroscopy. Stress measurements were done using Raman shifts of the Ge optical phonon line at 300.7 cm-1. The effect of the embedding matrix and annealing methods on Ge NC formation were investigated. In addition to Ge NCs in single layer samples, the stress on Ge NCs in multilayer samples was also analyzed. Multilayers of Ge NCs in a silicon nitride matrix separated by dielectric buffer layers to control the size and density of NCs were fabricated. Multilayers consisted of SiN y :Ge ultrathin films sandwiched between either SiO2 or Si3N4 by the proper choice of buffer material. We demonstrated that it is possible to tune the stress state of Ge NCs from compressive to tensile, a desirable property for optoelectronic applications. We also observed that there is a correlation between the stress and the crystallization threshold in which the compressive stress enhances the crystallization, while the tensile stress suppresses the process.
dc.identifier.doi10.1088/1361-6528/aaaffa
dc.identifier.eissn1361-6528
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/11693/50115
dc.language.isoEnglish
dc.publisherInstitute of Physics Publishing
dc.relation.isversionofhttps://doi.org/10.1088/1361-6528/aaaffa
dc.source.titleNanotechnologyen_US
dc.subjectDielectric matricesen_US
dc.subjectGermanium nanostructuresen_US
dc.subjectRaman spectroscopyen_US
dc.subjectStress tuningen_US
dc.subjectSuperlatticesen_US
dc.subjectTransmission electron microscopyen_US
dc.titleStress evolution of Ge nanocrystals in dielectric matricesen_US
dc.typeArticleen_US

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