On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods

buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2162en_US
dc.citation.issueNumber12en_US
dc.citation.spage2153en_US
dc.citation.volumeNumber51en_US
dc.contributor.authorDemirezen, S.en_US
dc.contributor.authorAltindal, S.en_US
dc.contributor.authorÖzelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T09:49:34Z
dc.date.available2016-02-08T09:49:34Z
dc.date.issued2011-06-08en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn order to explain the experimental effect of interface states (N ss) and series resistance (Rs) of device on the non-ideal electrical characteristics, current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of (Ni/Au)/Al 0.22Ga0.78N/AlN/GaN heterostructures were investigated at room temperature. Admittance measurements (C-V and G/ω-V) were carried out in frequency and bias voltage ranges of 2 kHz-2 MHz and (-5 V)-(+5 V), respectively. The voltage dependent Rs profile was determined from the I-V data. The increasing capacitance behavior with the decreasing frequency at low frequencies is a proof of the presence of interface states at metal/semiconductor (M/S) interface. At various bias voltages, the ac electrical conductivity (σac) is independent from frequencies up to 100 kHz, and above this frequency value it increases with the increasing frequency for each bias voltage. In addition, the high-frequency capacitance (C m) and conductance (Gm/ω) values measured under forward and reverse bias were corrected to minimize the effects of series resistance. The results indicate that the interfacial polarization can more easily occur at low frequencies. The distribution of Nss and R s is confirmed to have significant effect on non-ideal I-V, C-V and G/ω-V characteristics of (Ni/Au)/Al0.22Ga0.78N/AlN/ GaN heterostructures.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:49:34Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2011en
dc.identifier.doi10.1016/j.microrel.2011.05.010en_US
dc.identifier.issn0026-2714
dc.identifier.urihttp://hdl.handle.net/11693/21671
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.microrel.2011.05.010en_US
dc.source.titleMicroelectronics Reliabilityen_US
dc.subjectAC electrical conductivityen_US
dc.subjectAdmittance measurementsen_US
dc.subjectAdmittance spectroscopiesen_US
dc.subjectCapacitance voltageen_US
dc.subjectCurrent voltageen_US
dc.subjectElectrical characteristicen_US
dc.subjectHigh frequency HFen_US
dc.subjectInterface stateen_US
dc.subjectInterfacial polarizationen_US
dc.subjectLow frequencyen_US
dc.subjectReverse biasen_US
dc.subjectRoom temperatureen_US
dc.subjectSeries resistancesen_US
dc.subjectVoltage rangesen_US
dc.subjectAluminumen_US
dc.subjectCapacitanceen_US
dc.subjectCrystalsen_US
dc.subjectElectric conductivityen_US
dc.subjectElectric resistanceen_US
dc.subjectGallium nitrideen_US
dc.subjectSpectroscopic analysisen_US
dc.subjectBias voltageen_US
dc.titleOn the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methodsen_US
dc.typeArticleen_US

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