Differential charging in SiO2/Si systems as determined by XPS

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buir.contributor.authorSüzer, Şefik
dc.citation.epage1518en_US
dc.citation.issueNumber4en_US
dc.citation.spage1515en_US
dc.citation.volumeNumber108en_US
dc.contributor.authorKaradas, F.en_US
dc.contributor.authorErtas, G.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2016-02-08T10:27:44Z
dc.date.available2016-02-08T10:27:44Z
dc.date.issued2004en_US
dc.departmentDepartment of Chemistryen_US
dc.description.abstractThe Si2p binding and the SiKLL kinetic energy difference between the SiO2 layer and Si substrate is shown to be influence by application of external voltage bias to the sample holder due to the differential charging as was already reported earlier (Ulgut, B.; Suzer, S. J. Phys. Chem. B 2003, 107, 2939). The cause of this bias induced (physical)-shift is now proven to be mostly due to partial neutralization by the stray electrons within the vacuum system by (i) introducing additional stray electrons via a filament and following their influence on the measured binding energy as a function of the applied voltage, (ii) measuring and Auger parameter. It is also shown that citrate-capped gold nanoclusters deposited on the SiO2/Si system experience differential charging similar to that of the oxide layer rather than the silicon substrate.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:27:44Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2004en
dc.identifier.doi10.1021/jp035498gen_US
dc.identifier.issn1520-6106
dc.identifier.urihttp://hdl.handle.net/11693/24333
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttp://pubs.acs.org/doi/full/10.1021/jp035498gen_US
dc.source.titleJournal of Physical Chemistry Ben_US
dc.subjectBinding energyen_US
dc.subjectDepositionen_US
dc.subjectElectronsen_US
dc.subjectKinetic energyen_US
dc.subjectSiliconen_US
dc.subjectSubstratesen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectAuger parameteren_US
dc.subjectPartial neutralizationen_US
dc.subjectSilicon substrateen_US
dc.subjectSilicaen_US
dc.titleDifferential charging in SiO2/Si systems as determined by XPSen_US
dc.typeArticleen_US

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