Monitoring the operation of a graphene transistor in an integrated circuit by XPS

buir.contributor.authorSüzer, Şefik
dc.citation.epage185en_US
dc.citation.spage178en_US
dc.citation.volumeNumber37en_US
dc.contributor.authorAydogan, P.en_US
dc.contributor.authorBalci, O.en_US
dc.contributor.authorKocabas, C.en_US
dc.contributor.authorSüzer, Şefiken_US
dc.date.accessioned2018-04-12T10:53:34Z
dc.date.available2018-04-12T10:53:34Z
dc.date.issued2016en_US
dc.departmentDepartment of Chemistryen_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractOne of the transistors in an integrated circuit fabricated with graphene as the current controlling element, is investigated during its operation, using a chemical tool, XPS. Shifts in the binding energy of C1s are used to map out electrical potential variations, and compute sheet resistance of the graphene layer, as well as the contact resistances between the metal electrodes. Measured shifts depend on lateral positions probed, as well as on polarity and magnitude of the gate-voltage. This non-contact and chemically specific characterization can be pivotal in diagnoses.en_US
dc.identifier.doi10.1016/j.orgel.2016.06.027en_US
dc.identifier.eissn1878-5530
dc.identifier.issn1566-1199
dc.identifier.urihttp://hdl.handle.net/11693/36794
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.orgel.2016.06.027en_US
dc.source.titleOrganic Electronicsen_US
dc.subjectContact resistanceen_US
dc.subjectGrapheneen_US
dc.subjectIntegrated circuiten_US
dc.subjectTransistoren_US
dc.subjectXPSen_US
dc.titleMonitoring the operation of a graphene transistor in an integrated circuit by XPSen_US
dc.typeArticleen_US

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