S-band GaN based low noise MMIC amplifier design and characterization

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buir.advisorÖzbay, Ekmel
dc.contributor.authorTaşcı, Muhittin
dc.date.accessioned2019-02-26T12:02:44Z
dc.date.available2019-02-26T12:02:44Z
dc.date.copyright2019-02
dc.date.issued2019-02
dc.date.submitted2019-02-21
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionCataloged from PDF version of article.en_US
dc.descriptionThesis (M.S.) : Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2019.en_US
dc.descriptionIncludes bibliographical references (leaves 70-73).en_US
dc.description.abstractLow Noise Amplifiers (LNA) are widely preferred components in receiver frontend modules. The received signal level is generally very low and amplifying it without adding too much noise is very crucial in communication systems. In this thesis study design, fabrication and test of three Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) based Monolithic Microwave Circuit (MMIC) LNAs are presented. Inductive source feedback topology is used to obtain both better input return loss and noise figure. All three designs achieve higher than 20 dB gain, better than 10 dB input return loss and their noise figure values are 2 dB, 1.5 dB and 1 dB in S-band. High resistive gate biasing is utilized at third design to increase input power handling. Size reduction is very important in MMIC technology. The first design is 3 x 5 mm and the second design is 2 x 3.5 mm, % 46 size reduction is achieved. In GaN technology controlling SiN layer thickness is very problematic and this fabrication step affects capacitor values. The second and third LNA designs presented in this research, matching circuitries and implicitly overall characteristics are not in uenced too much by a change of capacitor values. Targeted bandwidth is 2.7-3.5 GHz, achieved frequency range is 1.5 GHz (from 2.5 GHz to 4 GHz). The three LNA designs have 28.1 dBm, 33.4 dBm, and 35.9 dBm output third-order intercept point respectively. Output powers at 1-dB compression points are 18.2 dBm, 23.4 dBm and 25.9 dBm. For all three LNA designs, group delay is less than 0.3 nanoseconds.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilityby Muhittin Taşcıen_US
dc.format.extentxiv, 73 leaves : illustrations (some color) ; 30 cm.en_US
dc.identifier.itemidB159728
dc.identifier.urihttp://hdl.handle.net/11693/50630
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectLow noise amplifieren_US
dc.subjectAlGaN/GaN HEMTen_US
dc.subjectGaN MMICen_US
dc.subjectT-gateen_US
dc.subjectIntermodulation distortionen_US
dc.titleS-band GaN based low noise MMIC amplifier design and characterizationen_US
dc.title.alternativeS-bant GaN tabanlı düşük gürültülü yükselteç tasarımı ve karakterizasyonuen_US
dc.typeThesisen_US

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Dept. of Electrical and Electronics Engineering - Master's degree