Hybrid atomic force/scanning tunneling lithography

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buir.contributor.orcidAtalar, Abdullah|0000-0002-1903-1240
dc.citation.epage1817en_US
dc.citation.issueNumber5en_US
dc.citation.spage1811en_US
dc.citation.volumeNumber15en_US
dc.contributor.authorWilder, K.en_US
dc.contributor.authorSoh, H. T.en_US
dc.contributor.authorAtalar, Abdullahen_US
dc.contributor.authorQuate, C. F.en_US
dc.date.accessioned2016-02-08T10:47:40Z
dc.date.available2016-02-08T10:47:40Z
dc.date.issued1997en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractWe present a new technique for performing lithography with scanning probes that has several advantages over standard methods. This hybrid lithography system combines the key features of the atomic force microscope (AFM) and the scanning tunneling microscope (STM) by incorporating two independent feedback loops, one to control current and one to control force. We demonstrate a minimum resolution of 41 nm and nanometer alignment capabilities. This lithography system is capable of writing continuous features over sample topography. Topography is often present in real patterning applications and poses problems for AFM and STM lithography. We report 100 nm resist features patterned over 180 nm of topography created by local oxidation of silicon. The hybrid AFM/STM system is designed as a robust scanning probe lithography tool, capable of high-speed patterning and suited for integrated circuit lithography applications.en_US
dc.identifier.doi10.1116/1.589530en_US
dc.identifier.issn1071-1023
dc.identifier.urihttp://hdl.handle.net/11693/25608
dc.language.isoEnglishen_US
dc.publisherAmerican Vacuum Societyen_US
dc.relation.isversionofhttps://doi.org/10.1116/1.589530en_US
dc.source.titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_US
dc.titleHybrid atomic force/scanning tunneling lithographyen_US
dc.typeArticleen_US

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