High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes
| buir.contributor.author | Bıyıklı, Necmi | |
| buir.contributor.author | Özbay, Ekmel | |
| buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
| dc.citation.epage | 680 | en_US |
| dc.citation.spage | 679 | en_US |
| dc.contributor.author | Özbay, Ekmel | en_US |
| dc.contributor.author | Bıyıklı, Necmi | en_US |
| dc.contributor.author | Kimukin, İbrahim | en_US |
| dc.contributor.author | Aytür, Orhan | en_US |
| dc.coverage.spatial | San Francisco, CA, USA | en_US |
| dc.date.accessioned | 2016-02-08T12:02:48Z | |
| dc.date.available | 2016-02-08T12:02:48Z | |
| dc.date.issued | 1999 | en_US |
| dc.department | Department of Physics | en_US |
| dc.department | Department of Electrical and Electronics Engineering | en_US |
| dc.description | Date of Conference: 8-11 November 1999 | en_US |
| dc.description | Conference Name: LEOS’99 12th Annual Meeting: IEEE Lasers and Electro-Optics Society 1999 Annual Meeting | en_US |
| dc.description.abstract | The fabrication of ITO (indium tin oxide)-AlAs-based resonant cavity enhanced Schottky photodiodes was examined. The device structure was designed to achieve a low-loss cavity around a 840 nm optical communication window. The layers were grown by molecular beam epitaxy on a GaAs substrate. Photoresponse measurements were carried out in 750-900 nm wavelength range using a tungsten-halogen projection lamp as the light source and single pass monochromator. Although the discrepancy between the experiment and theory was quite large, a nearly parallel enhancement of the initial efficiency values was observed as a function of the top distributed Bragg reflector pair. | en_US |
| dc.identifier.doi | 10.1109/LEOS.1999.811909 | en_US |
| dc.identifier.issn | 1092-8081 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11693/27844 | |
| dc.language.iso | English | en_US |
| dc.publisher | IEEE | en_US |
| dc.relation.isversionof | http://doi.org/10.1109/LEOS.1999.811909 | en_US |
| dc.source.title | Proceedings of the LEOS’99 12th Annual Meeting: IEEE Lasers and Electro-Optics Society 1999 Annual Meeting | en_US |
| dc.subject | Gallium arsenide | en_US |
| dc.subject | Resonance | en_US |
| dc.subject | Photodiodes | en_US |
| dc.subject | Conducting materials | en_US |
| dc.subject | Mirrors | en_US |
| dc.title | High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes | en_US |
| dc.type | Conference Paper | en_US |
| relation.isAuthorOfPublication | 8c1d6866-696d-46a3-a77d-5da690629296 |