Fabrication and characterization of semiconductor double quantum well diode lasers

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buir.advisorSerpengüzel, Ali
dc.contributor.authorSağol, Bülent Erol
dc.date.accessioned2016-01-08T20:15:56Z
dc.date.available2016-01-08T20:15:56Z
dc.date.issued1998
dc.departmentDepartment of Physicsen_US
dc.descriptionAnkara : Department of Physics and Institute of Engineering and Science, Bilkent Univ., 1998.en_US
dc.descriptionThesis (Master's) -- Bilkent University, 1998.en_US
dc.descriptionIncludes bibliographical references leaves 74-78.en_US
dc.description.abstractIn this thesis, semiconductor double quantum well, Fabry-Perot and half ring hisers were fabricated, and these devices were operated and characterized at room temperature. The lasers were fabricated using GaAs/AlGaAs double quantum well wafers, and processed in order to produce 4^m wide, l/im-4/im high mesas for optical confinement. This mesa isolation was done by means of wet and dry etching techniques. Fabrication of Fabry-Perot lasers was completed after Si02 insulation, p-contact and n-contact metalizations, thinning, and dicing. Similar fabrication techniques were applied to produce ring lasers coupled to Fabry-Perot cavities, with various diameters ranging from 50 to 1400//m. Device characterization was done by means of photoluminescence, currentvoltage, current-power measurements, and electroluminescence. Photoluminescence was used for checking the lasing wavelength. Current-voltage and current-power measurements were done to investigate the serial resistances, threshold currents, and differential quantum efficiencies of the fabricated devices with various cavity lengths. From these measurements, the threshold current densities, the internal quantum efficiencies, and the internal net optical losses were obtained. Finally, electroluminescence was used to obtain the lasing spectra, and from this, the free spectral range of the Fabry-Perot and ring lasers were measured.en_US
dc.description.degreeM.S.en_US
dc.description.statementofresponsibilitySağol, Bülent Erolen_US
dc.format.extentvi, 78 leavesen_US
dc.identifier.urihttp://hdl.handle.net/11693/18068
dc.language.isoEnglishen_US
dc.publisherBilkent Universityen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSemiconductor diode lasersen_US
dc.subjectquantum wellen_US
dc.subjectFabry-Peroten_US
dc.subjectlasing spectrumen_US
dc.subjectthreshold currenten_US
dc.subjectgain bandwidthen_US
dc.subjectring laseren_US
dc.subject.lccTA1700 .S23 1998en_US
dc.subject.lcshSemiconductor lasers.en_US
dc.titleFabrication and characterization of semiconductor double quantum well diode lasersen_US
dc.typeThesisen_US

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