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The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage227en_US
dc.citation.issueNumber1en_US
dc.citation.spage224en_US
dc.citation.volumeNumber13en_US
dc.contributor.authorSarikavak-Lisesivdin, B.en_US
dc.contributor.authorLisesivdin, S. B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T11:59:28Z
dc.date.available2015-07-28T11:59:28Z
dc.date.issued2013-01en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractAl0.31Ga0.69N/AlN/GaN/InxGa1-xN/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different InxGa1-xN back-barriers with In mole fractions of 0.05 <= x <= 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin InxGa1-xN back-barrier and the surrounding layers.en_US
dc.identifier.doi10.1016/j.cap.2012.07.012en_US
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/11693/11965
dc.language.isoEnglishen_US
dc.publisherElsevieren_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.cap.2012.07.012en_US
dc.source.titleCurrent Applied Physicsen_US
dc.subjectIngan Back-barrieren_US
dc.subjectMocvden_US
dc.subjectXrden_US
dc.subjectDefect Analysesen_US
dc.titleThe effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)en_US
dc.typeArticleen_US
dspace.entity.typePublication

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