Publication:
Fabrication of high-speed resonant cavity enhanced schottky photodiodes

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Fabrication of high-speed resonant cavity enhanced schottky photodiodes.pdf (309.92 KB)

Date

1997-05

Authors

Özbay, Ekmel
Islam, M. S.
Onat, B.
Gökkavas, M.
Aytür, O.
Tuttle, G.
Towe, E.
Henderson, R. H.
Ünlü, M. S.

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Publisher

Institute of Electrical and Electronics Engineers

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Abstract

We report the fabrication and testing of a GaAs-based high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In0.8Ga0.92As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-width-at-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.

Description

Keywords

High-speed circuits/devices, Photodetectors, Photodiodes, Resonant caity enhancement, Schottky diodes, Bandwidth, Electric contacts, Frequency response, Integrated optoelectronics, Mirrors, Photodetectors, Schottky barrier diodes, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor device manufacture, Semiconductor device testing, Full width at half maximum (FWHM), Resonant cavity enhanced (RCE) Schottky photodiodes, Schottky metal contacts, Photodiodes

Citation

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http://hdl.handle.net/11693/25634

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Scholarly Publications - Physics
Scholarly Publications - Electrical and Electronics Engineering