Browsing by Subject "strain"

Now showing 1 - 3 of 3

Open Access
Electronic structure of graphene under the influence of external fields
(2012) İslamoğlu, Selcen
In this thesis, the electronic structure of graphene under the influence of external fields such as strain or magnetic fields is investigated by using tight-binding method. Firstly, we study graphene for a band gap opening due to uniaxial strain. In contrast to the literature, we find that by considering all the bands (both σ and π bands) in graphene and including the second nearest neighbor interactions, there is no systematic band gap opening as a function of applied strain. Our results correct the previous works on the subject. Secondly, we examine the band structure and Hall conductance of graphene under the influence of perpendicular magnetic field. For graphene, we demonstrate the energy spectrum in the presence of magnetic field (Hofstadter Butterfly) where all orbitals are included. We recover both the usual and the anomalous integer quantum Hall effects depending on the proximity of the Dirac points for pure graphene and the usual integer quantum Hall effect for pure square lattice. Then, we explore the evolution of electronic properties when imperfections are introduced systematically to the system. We also demonstrate the results for a square lattice which has a distinct position in cold atom experiments. For the energy spectrum of imperfect graphene and square lattice under magnetic field (Hofstadter Butterflies), we find that impurity atoms with smaller hopping constants result in highly localized states which are decoupled from the rest of the system. The bands associated with these states form close to E = 0 eV line. On the other hand, impurity atoms with higher hopping constants are strongly coupled with the neighboring atoms. These states modify the Hofstadter Butterfly around the minimum and maximum values of the energy and for the case of graphene they form two self similar bands decoupled from the original butterfly. We also show that the bands and gaps due to the impurity states are robust with respect to the second order hopping. For the Hall conductance, in accordance with energy spectra, the localized states associated to the smaller hopping constant impurities or vacancies do not contribute to Hall conduction. However the higher hopping constant impurities are responsible for new extended states which contribute to Hall conduction. Our results for Hall conduction are also robust with respect to the second order interactions.
Open Access
Novel wireless RF-bioMEMS implant sensors of metamaterials
(2010) Melik, Rohat
Today approximately one out of ten patients with a major bone fracture does not heal properly because of the inability to monitor fracture healing. Standard radiography is not capable of discriminating whether bone healing is occurring normally or aberrantly. To solve this problem, we proposed and developed a new enabling technology of implantable wireless sensors that monitor mechanical strain on implanted hardware telemetrically in real time outside the body. This is intended to provide clinicians with a powerful capability to asses fracture healing following the surgical treatment. Here we present the proof-of-concept in vitro and ex vivo demonstrations of bio-compatible radio-frequency (RF) micro-electro-mechanical system (MEMS) strain sensors for wireless strain sensing to monitor healing process. The operating frequency of these sensors shifts under mechanical loading; this shift is related to the surface strain of the implantable test material. In this thesis, for the first time, we developed and demonstrated a new class of bio-implant metamaterial-based wireless strain sensors that make use of their unique structural advantages in sensing, opening up important directions for the applications of metamaterials. These custom-design metamaterials exhibit better performance in remote sensing than traditional RF structures (e.g., spiral coils). Despite their small size, these meta-sensors feature a low enough operating frequency to avoid otherwise strong background absorption of soft tissue and yet yield higher Q-factors (because of their splits with high electric field density) compared to the spiral structures. We also designed and fabricated flexible metamaterial sensors to exhibit a high level of linearity, which can also conveniently be used on non-flat surfaces. Innovating on the idea of integrating metamaterials, we proposed and implemented a novel architecture of ‘nested metamaterials’ that incorporate multiple split ring resonators integrated into a compact nested structure to measure strain telemetrically over a thick body of soft tissue. We experimentally verified that this nested metamaterial architecture outperforms classical metamaterial structures in telemetric strain sensing. As a scientific breakthrough, by employing our nested metamaterial design, we succeeded in reducing the electrical length of the sensor chip down to λo/400 and achieved telemetric operation across thick soft tissue with a tissue thickness up to 20 cm, while using only sub-cm implantable chip size (compatible with typical orthopaedic trauma implants and instruments). As a result, with nested metamaterials, we successfully demonstrated wireless strain sensing on sheep’s fractured metatarsal and femur using our sensors integrated on stainless steel fixation plates and on sheep’s spine using directly attached sensors in animal models. This depth of wireless sensing has proved to suffice for a vast portfolio of bone fracture (including spine) and trauma care applications in body, as also supported by ongoing in vivo experiments in live animal models in collaboration with biomechanical and medical doctors. Herein, for all generations of our RF-bioMEMS implant sensors, this dissertation presents a thorough documentation of the device conception, design, modeling, fabrication, device characterization, and system testing and analyses. This thesis work paves the way for “smart” orthopaedic trauma implants, and enables further possible innovations for future healthcare.
Open Access
On the strain in silicon nanocrystals
(2009) Yılmaz, Dündar
In this Thesis we present our achievements towards an understanding of atomistic strain mechanisms and interface chemistry in silicon nanocrystals. The structural control of silicon nanocrystals embedded in amorphous oxide is currently an important technological problem. First, our initial attempt is described to simulate the structural behavior of silicon nanocrystals embedded in amorphous oxide matrix based on simple valence force fields as described by Keatingtype potentials. Next, the interface chemistry of silicon nanocrystals (NCs) embedded in amorphous oxide matrix is studied through molecular dynamics simulations with the chemical environment being governed by the reactive force field model. Our results indicate that the Si NC-oxide interface is more involved than the previously proposed schemes which were based on solely simple bridge or double bonds. We identify different types of three-coordinated oxygen complexes, previously not noted. The abundance and the charge distribution of each oxygen complex is determined as a function of the NC size as well as the transitions among them. Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon NCsup to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A seemingly conflicting picture arises when the strain field is expressed in terms of bond lengths versus volumetric strain. The strain profile in either case shows uniform behavior in the core, however it becomes nonuniform within 2- 3 ˚A distance to the NC surface: tensile for bond lengths whereas compressive for volumetric strain. We reconcile their coexistence by an atomistic strain analysis. Vibrational density of states (VDOS) affects the optical properties of Si-NCs. VDOS obtained by calculating velocity autocorrelation function (VACF) using velocities of the atoms is extracted from the molecular dynamics simulations. The information on bonding topology enables classification of atoms in the system with respect to their neighbor atoms. With help of this information we separate contributions of different type of atoms to the VDOS. Calculating VACF of different type of atoms such as surface atoms and core atoms of nanocrystal, to the system facilitates understanding of the effects of strain fields and interface chemistry to the VDOS.