Browsing by Subject "X-Band"

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    ItemOpen Access
    Design of a GaN-based high gain X-Band power amplifier
    (2024-05) Ağtaş, Utku
    RF power amplifiers remain a vital element of space, airborne, and radar applications. Modern systems require high power and gain while maintaining high efficiency. However, obtaining these features with a compact design brings challenges. Monolithic Microwave Integrated Circuits (MMIC) provide flexibility and enhanced performance while operating at higher frequencies. Among other transistor technologies, GaN on SiC based high electron mobility transistors (HEMTs) provide extraordinary performance with high power density, thermal conductivity, and high band gap. In this thesis, we present a three-stage X-Band MMIC power amplifier (PA) based on NANOTAM 250 nm GaN-on-SiC process technology. The characterization steps of the transistors are discussed to extract process parameters for the design. The amplifier is designed on the Keysight ADS environment. The design is realized on a 3-inch GaN-on-SiC wafer. In the 8.5–10.5 GHz frequency band, measurements show that the PA achieves a 40 dB small signal gain, PAE higher than 40%, and average 20 W output power under 28 V, 100 mA/mm pulsed biasing conditions at room temperature. The MMIC occupies 10.26 mm2 area and has 1.96 W/mm2 power density.
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    ItemOpen Access
    X-band high power GaN SPDT MMIC RF switches
    (IEEE, 2019) Osmanoğlu, Sinan; Özbay, Ekmel
    This paper describes the design results and measured performance of three different high power, low loss and high isolation GaN high electron mobility transistor (HEMT) based single-pole double-throw (SPDT) RF switches. Three different topologies were employed to design the proposed switches. The SPDT MMIC switches were developed with coplanar waveguide (CPW) GaN-HEMT technology to operate in X-Band. The measured performance showed that the switches have typical insertion loss of better than 2 dB, higher than 30 dB isolation with better than 10 dB return losses.