Browsing by Subject "Waveguide"
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Item Open Access Comparative investigation og hydrogen bonding in silicon based PECVD grown dielectrics for optical(Elsevier, 2004-06) Ay, F.; Aydınlı, AtillaSilicon oxide, silicon nitride and silicon oxynitride layers were grown by a PECVD technique. The resulting refractive indices of the layers varied between 1.47 and 1.93. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. Comparative investigation of bonding structures for the three different layers was performed. Special attention was given to analyze N-H bond stretching absorption at 3300-3400 cm(-1). Quantitative results for hydrogen related bonding concentrations are presented based on IR analysis. An annealing study was performed in order to reduce or eliminate this bonding types. For the annealed samples the N-H bond concentration was strongly reduced as verified by FTIR transmittance and ATR spectroscopic methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. Its absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides. (C) 2004 Elsevier B.V. All rights reserved.Item Open Access In-chip devices fabricated with nonlinear laser lithography deep inside silicon(Bilkent University, 2019-05) Turnalı, AhmetThe integration of photonic elements with electronic elements on the same chip is highly desirable, since it may lead to new generation of devices. One constraint in this direction is the limited space available on the wafer surface. Currently, conventional fabrication methods use only the top thin layer of the silicon platforms for device fabrication. Therefore, new architectural designs are necessary. Creating functional elements deep inside silicon without damaging the surfaces is a promising approach to overcome space bottleneck in electronicphotonic integration, since the bulk of the wafer can be utilized with this method. Laser-written devices have been demonstrated in various transparent materials, such as glasses and polymers. When focused, high-energy laser pulses can induce nonlinear breakdown and change the morphology of the interaction region enclosed by the material. This process enables the fabrication of a diverse set of devices, including interconnects, optical waveguides and quantum photonic devices. However, so far, similar approaches did not succeed in silicon. We demonstrated a similar enabling method inside silicon, where nonlinear e ects were exploited to generate highly controllable modi cations deep inside silicon. We used these modi cations as building blocks to create in-chip elements. We developed a simple, intuitive model to understand the structure formation in more detail, which indicated that nonlinear interaction between counterpropagating beams causes the self-focusing of the beam, resulting in disruption in crystal structure. Propagation of the pulses are recon gured by the previously modi ed region. The focal point of the pulse shifts, elongating the structure. These elongated structures can provide the necessary phase shift to build di ractive optical elements embedded in Si, among other optical elements. We demonstrated this concept by fabricating binary and grayscale Fourier holograms and a binary Fresnel hologram projecting four layers forming a 3D image. In an extension of this work, the algorithm is developed for greyscale Fresnel holograms and increased the possible numbers of projections layers three orders of magnitude. Moreover, we used in-chip modi cations for creating optical waveguides inside silicon with the lowest losses reported so far. By selectively etching the modi- cations, we showed a second set of applications. We sculpted the silicon with this method to fabricate micropillars, through-Si vias and micro uidic channels. Further, we extended the method to other semiconductors and nanostructured the bulk GaAs. We also investigated the possibility of new processing regimes by using Bessel beams and 2 m laser pulses.Item Open Access Nanoantenna couplers for metal-insulator-metal waveguide interconnects(SPIE, 2010) Onbasli, M.C.; Okyay, Ali KemalState-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times. © 2010 SPIE.Item Open Access Physics and applications of coupled-cavity structures in photonic crystals(Bilkent University, 2002) Bayındır, MehmetWe proposed and demonstrated a new type of propagation mechanism for the electromagnetic waves in photonic band gap materials. Photons propagate through coupled cavities due to interaction between the highly localized neighboring cavity modes. We reported a novel waveguide, which we called coupled-cavity waveguide (CCW), in two- and three-dimensional photonic structures. By using CCWs, we demonstrated lossless and reflectionless waveguide bends, efficient power splitters, and photonic switches. We also experimentally observed the splitting of eigenmodes in coupled-cavities and formation of defect band due to interaction between the cavity modes. We reported the modification of spontaneous emission from hydrogenated amorphous silicon-nitride and silicon-oxide multilayers with coupled Fabry-Perot microcavities. We observed that the spontaneous emission rate is drastically enhanced at the coupledmicrocavity band edges due to very long photon lifetime. We also simulated our photonic structures by using the Transfer-Matrix-Method (TMM) and the Finite-Difference-Time-Domain (FDTD) method. The tight-binding (TB) approach, which was originally developped for the electronic structure calculations, is applied to the photonic structures, and compared to our experimental results. The measured results agree well with the simulations and the prediction of TB approximation. The excellent agreement between the measured, simulated, and the TB results is an indication of potential usage of TB approximation in photonic structures. Our achievements open up a new research area, namely physics and applications of coupled-cavities, in photonic structures. These results are very promising to construct for the future all-optical components on a single chip.Item Open Access Physics and applications of defect structures in photonic crystals(SPIE, 2003) Özbay, Ekmel; Güven, Kaan; Bayındır, MehmetPhotonic crystals are three dimensional periodic structures having the property of reflecting the electromagnetic (EM) waves in all dimensions, for a certain range of frequencies. Defects or cavities around the same geometry can also be built by means of adding or removing material. The electrical fields in such cavities are usually enhanced, and by placing active devices in such cavities, one can make the device benefit from the wavelength selectivity and the large enhancement of the resonant EM field within the cavity. By using coupled periodic defects, we have experimentally observed a new type of waveguiding in a photonic crystal. A complete transmission was achieved throughout the entire waveguiding band. The transmission, phase, and delay time characteristics of the various coupled-cavity structures were measured and calculated. We observed the eigenmode splitting, waveguiding through the coupled cavities, splitting and switching of electromagnetic waves in waveguide ports, and Mach-Xender interferometer effect in such structures. The corresponding field patterns and the transmission spectra were obtained from the finite-difference-time-domain (FDTD) simulations. We developed a theory based on the classical wave analog of the tight-binding (TB) approximation in solid state physics. Experimental results are in good agreement with the FDTD simulations and predictions of the TB approximation.Item Open Access Physics and applications of photonic crystals(Bilkent University, 2000) Temelkuran, BurakWe first fabricated a dielectric based layer-by-layer photonic crystal, with a three-dimensional photonic band gap at microwave frequencies. We investigated the transmission, reflection and defect characteristics of the crystal. A Fabry-Perot cavity analogy was used to understand the localization of the electromagnetic (EM) fields around defects. We then showed the enhancement of the EM held within the defect volumes, and suggested a possible application: resonant cavity enhanced detectors built around photonic crystals. We demonstrated that a detector inserted inside the defect volume benefits from the frequency selectivity and the highly enhanced field of the cavity. Next, we investigated the radiation of the EM fields from a source inserted in the defect volume, and observed that the radiated field has a very high directivity and efficiency. The experimental results agreed well with the theoretical expectations. We demonstrated waveguiding structures built around photonic crystals. We showed that EM waves could be guided through a planar air gap between two photonic crystals, in which the wave is coupled inside the defect volume, and having no where else to go, propagates through this opening. The dispersion diagrams for these planar waveguide structures also agreed well with the theoretical expectations of our waveguide model. We also showed that, the wave could be guided along a single missing rod, and demonstrated the bending of the EM waves for these waveguide structures with “L” shaped openings. We tested metallic photonic crystals built in different dimensions and diflferent filling ratios. We observed many superiorities of these structures when compared to dielectric-based photonic crystals. A full characterisation of various metallic photonic crystals was performed. We also showed that metallic photonic crystals are suitable for some of the applications we have demonstrated for dielectric structures. We also fabricated a new layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques, with a band gap at millimeter wave frequencies. We showed that the transmission and defect characteristics of these structures are analogous to metallic photonic crystals, as we have predicted. The experimental results agree well with the predictions of the transfer matrix method (TMM) simulations. The method can be extended to fabricate these crystals at THz. frequencies.Item Open Access Silicon based dielectrics : growth, characterization, and applications in integrated optics(Bilkent University, 2005) Ay, FeridunIn recent years, growing attention has been paid to silicon based dielectrics, such as silicon oxynitrides, silicon nitrides, and semiconductor doped silicon oxides, all combined under the name silica on silicon technology. This attention has been motivated mainly due to their excellent optical properties such as well controlled refractive index and high transparency over a wide range of wavelength. In accordance with the main goal of this study that relied on the utilization of silicon based dielectrics and their optimization for applications in integrated optics, an emphasis was given to optimize the compositional and optical properties of these materials. A detailed quantitative compositional analysis using Fourier transform infrared spectroscopy resulted in identification of the germanosilicate dielectrics as the most promising candidates for use in integrated optics. The first reported systematic study of propagation losses for different-index planar waveguides by using prism coupling method was correlated with the compositional analysis. This study had an important outcome for planar waveguides fabricated with germanosilicate core layers resulting in the lowest propagation loss values reported so far for as deposited CVD-grown films at λ=1.55 µm, eliminating the need for costly and cumbersome annealing process. An improvement of the prism coupling technique led to a new approach for elasto-optic characterization of thin polymer films. This completely new method allows one to determine the optical anisotropy and out-of-plane mechanical properties and to correlate both in order to obtain the elasto-optical properties of thin polymer films, for the first time. Of interest as potential electro-optic material, we have concentrated on thermally poled germanosilicate films deposited on fused-silica substrates by PECVD. As a result of an optimization study, we demonstrated a record peak nonlinear coefficient of ∼1.6 pm/V, approximately twice as strong as the highest reliable value reported in a thermally poled fused silica glass. Finally, we have demonstrated several applications of this technology in the field of integrated optics. Since optical waveguides constitute the building blocks of many integrated optical devices, we had first concentrated on design and optimization of waveguides employing germanosilicates as the core layers. The final step of our work concentrated on design and implementation of microring resonator devices based on germanosilicate layers.Item Open Access Silicon oxynitride layers for applications in optical waveguides(Bilkent University, 2000-09) Ay, FeridunSilicon oxynitride layers, aimed to serve as the core material for optical waveguides operating at l.55µm, v.-ere grown by a PECVD technique using SiH4, N20, and NH3 as precursor gases. The films were deposited at 350 °c, 13.56 MHz RF frequency, and 1 Torr pressure by varying the flow rates of N20 and l\"H3 gases. The resulting refractirn indices of the layers varied between 1.47 and 2.0. The compositional properties of the layers were analyzed by FTIR and ATR infrared spectroscopy techniques. A special attention was given to the N-H bond stretching absorption at 3300-3400 cm-1, since its first overtone is known to be the main cause of the optical absorption at l.55µm. An annealing study was performed in order to reduce or eliminate this bonding type. For the annealed samples the corresponding concentration was strongly reduced as verified by FTIR transmittance and ATR methods. A correlation between the N-H concentration and absorption loss was verified for silicon oxynitride slab waveguides. Moreover, a single mode waveguide with silicon oxynitride core layer was fabricated. lts absorption and insertion loss values were determined by butt-coupling method, resulting in low loss waveguides.Item Open Access Ti-indiffused waveguide polarizers on lithium niobate for fiber optic gyroscope(OSA, 2018) Kanlı, Yasemin; Öztekin, Evren; Dönertaş, Seval; Gökkavas, Mutlu; Özbay, EkmelWe report our results on polarizing waveguides fabricated by Ti indiffusion technique on x-cut y-propagating LiNbO3. Polarizing Ti indiffused waveguides with polarization extinction coefficient (PER) higher than 47 dB at their outputs, operating at 1550 nm wavelength were demonstrated.