Browsing by Subject "Vanadium sesquioxide"
Now showing 1 - 2 of 2
Results Per Page
Sort Options
Item Open Access Atomic force microscopy experiments on atomically thin materials(Bilkent University, 2020-06) Sheraz, AliIn 2004, successful isolation of graphene attracted immense attention of scientists because of atomic scale thickness and exotic functionalities. Regardless of graphene’s thickness and extraordinary properties only reason that limits the usage of graphene in electronics is no band gap. But there is a way to open band gap of graphene by introducing defects or applying electric field but defects introduction can affect its functionality. So, world moved towards transition metal dichalcogenides (TMDCs), new analogs of graphene with thickness dependent band gap option are promising nominee for potential applications in modern physics and electronics. Besides electronic properties, TMDCs depict excellent mechanical characteristics (in plane elastic modulus, breaking strength/strain and pretension) compared to conventional volumetric counterparts. The objective of this study is to investigate work function and mechanical properties of atomically thin materials using Kelvin probe force microscopy (KPFM) and Nanoindentation modes of Asylum Atomic Force Microscopy (AFM) respectively. Firstly, KPFM experiments were performed on CVD grown Vanadium Sesquioxide V2O3 to map surface potential variation and calculated work function value 4.91 eV. This will help in understanding band alignment, contact resistance and appropriate Schottky barrier height (SBH) by choosing metal contacts with closer work function to V2O3. Secondly by using AFM based nanoindentation we first time reported elastic features of metallic TMDCs: 2H-TaS2, 3R-NbS2, 1T-TaTe2 and 1T-NbTe2 with various thickness values suspended over circular holes. Comprehensive measurement was done on 2H-TaS2 and found thickness independent Young’s modulus for 2H-TaS2 is 114 ± 14 GPa, breaking strength 12.6 ± 2.6 GPa corresponds to nominal strain of 11% and ultimate strain of 0.22. Same mechanical features were investigated for other three materials and they also manifested extreme elasticity and high strain values compare to other 2D materials reported so far except graphene. This mechanical analysis of metallic materials will contribute in future flexible nano technological devices (for instance piezo electronics), wearable electronics, resistive coatings in electronic devices, nanoelectromechanical systems (NEMS) and strain sensors.Item Open Access Experiments on strongly correlated materials: magneto-transport properties of VO2 AND V2O3(Bilkent University, 2019-09) Sürmeli, Engin CanVanadium oxides provide unusual electrical and magnetic phenomena emerging from strong electronic correlations, which include, among other things, a thermally induced metal-insulator transition (MIT). Investigation of the changes in carrier concentration and mobility across the MIT in vanadium oxides, such as vanadium dioxide (VO2) and vanadium sesquioxide (V2O3), carries great importance for understanding the micromechanisms behind suchfirst-order phase transitions. A well-known approach to measuring such parameters in semiconductor materials is Hall effect measurement. So far, magnetotransport studies have only been conducted on polycrystalline thinfilms of VO2/V2O3. As a result, reports on the Hall mobility of these materials often contradict with each other due to the non-uniform stress building on the crystal by adhesion to the substrate. Thus, a thorough investigation of Hall effect measurements on single-crystalline, stress-free VO2 nanobeams and V2O3 nanoplates is required. However, achieving this task is not a straightforward process. First of all, the relatively small size of nanobeams compared to the epitaxialfilms creates the necessity to utilize a bridge-type Hall-bar shaping of the crystal. Additionally, in order to produce a stress-free environment, the crystals must be detached from the substrate and transferred to an atomically at surface, such as hexagonal boron nitride (h-BN). Therefore, the device fabrication method demands many steps despite that VO2 is a very fragile material. In this work, we provide a new fabrication method for shaping VO2 and V2O3 into Hall-bar structure via Gallium and Argon-ion milling while inducing minimal damage on the crystal. We also investigate the strain level of shaped crystals and provide methods to prevent cracking in the devices upon structural phase As a second objective, we investigate the resistivity behavior and magnetic response of VO2 nanobeams at low temperature ranges. We show that the high magnetoresistance of VO2 creates demand for very high magneticfields in the Hall effect measurements. Finally, we demonstrate a Hall effect measurement on an as-grown V2O3 nanoplatelet across its phase transition.