Browsing by Subject "Type II"
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Item Open Access Atomic layer deposited Al 2O 3 passivation of type II InAs/GaSb superlattice photodetectors(AIP, 2012) Salihoğlu, Ömer; Muti, Abdullah; Kutluer, Kutlu; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, AtillaTaking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD) aluminum oxide (Al 2O 3) was used as a novel approach for passivation of type II InAs/GaSb superlattice (SL) midwave infrared (MWIR) single pixel photodetectors in a self cleaning process (λ cut-off ∼ 5.1 m). Al 2O 3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes, the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 × 10 13 Jones, respectively at 4μm and 77 K. Quantum efficiency (QE) was determined as 41 for these detectors. This conformal passivation technique is promising for focal plane array (FPA) applications. © 2012 American Institute of Physics.Item Open Access Experimental verification of metamaterial based subwavelength microwave absorbers(American Institute of Physics, 2010-10-29) Alici, K. B.; Bilotti, F.; Vegni, L.; Özbay, EkmelWe designed, implemented, and experimentally characterized electrically thin microwave absorbers by using the metamaterial concept. The absorbers consist of (i) a metal back plate and an artificial magnetic material layer; (ii) metamaterial back plate and a resistive sheet layer. We investigated absorber performance in terms of absorbance, fractional bandwidth, and electrical thickness, all of which depend on the dimensions of the metamaterial unit cell and the distance between the back plate and metamaterial layer. As a proof of concept, we demonstrated a λ/4.7 thick absorber of type I, with a 99.8% absorption peak along with a 8% fractional bandwidth. We have shown that as the electrical size of the metamaterial unit cell decreases, the absorber electrical thickness can further be reduced. We investigated this concept by using two different magnetic metamaterial inclusions: the split-ring resonator (SRR) and multiple SSR (MSRR). We have also demonstrated experimentally a λ/4.7 and a λ/4.2 thick absorbers of type II, based on SRR and MSRR magnetic metamaterial back plates, respectively. The absorption peak of the SRR layout is 97.4%, while for the MSRR one the absorption peak is 98.4%. The 10 dB bandwidths were 9.9% and 9.6% for the SRR and MSRR cases, respectively.Item Open Access Nanocrystal light-emitting diodes based on type II nanoplatelets(Elsevier BV, 2018) Liu, B.; Delikanli S.; Gao, Y.; Dede, D.; Gungor K.; Demir, Hilmi VolkanColloidal semiconductor nanoplatelets (NPLs) have recently emerged as a new family of semiconductor nanocrystals with distinctive structural and electronic properties originating from their atomically flat architecture. To date, type II NPLs have been demonstrated to possess great potential to optoelectronic applications, such as solar cells and lasers. Herein, nanocrystal light-emitting diodes (LEDs) based on type II NPLs have been developed. The photoluminescence quantum yield of these used type II NPL (CdSe/CdSe0.8Te0.2 core/crown) is close to 85%. By exploring an effective inverted structure with the dual hole transport layer, the NPL-LEDs exhibit i) a turn-on voltage of 1.9 V, ii) a maximum luminance of 34520 cd m−2, iii) an EQE of 3.57% and a PE of 9.44 lm W−1. Compared with previous NPL-based LEDs, the performance of our devices is remarkably enhanced. For example, the luminance is 350-fold higher than the best inverted NPL-based LED. The findings may not only represent a significant step for NPL-based LEDs, but also unlock a new opportunity that this class of type II NPLs materials are promising for developing high-performance LEDs.