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Browsing by Subject "Tunneling"

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    ItemOpen Access
    Agency costs in an emerging market : investigating business groups
    (2017-09) Bakıcıol, Tamer
    Positive abnormal returns around loan announcements imply that banks have unique expertise in information production about borrowers. I study abnormal returns around loans that Turkish listed firms secure from international markets between 2003 and 2016 two investigate two research questions. Do listed firms controlled by business groups have higher agency costs when compared to stand-alone firms? Does control through pyramid ownership structures increase agency costs of business group listed firms? I hypothesize that controlled for other factors, abnormal returns around loan announcements measure agency costs associated with borrowers because new information provided by bank loans lead to the higher revaluation for business group firms that bear agency costs. I provide evidence that when business group firms are positioned within pyramid ownership structures they realize higher abnormal returns when benchmarked against stand-alone firms and business group firms that are not positioned within pyramids. Therefore, my results indicate market perception towards pyramid ownership structures in increasing tunneling incentives within business groups.
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    Atomic theory of the scanning tunneling microscope
    (1988) Tekman, Ahmet Erkan
    The Scanning Tunneling Microscope is proven to be one of the most powerful tools for surface structure determination. Present theories are able to explain the operation of the microscope when the tip is far from the surface. For the small tip height case the atomic-scale interaction of the tip and the surface has to be included in the theory. The electronic structure of the combined system of the tip and the surface is calculated with an Empirical Tight Binding approach for graphite. It is found that in the vicinity of the tip some Tip Induced Localized States are formed. These states play an important role in the tunneling phenomenon. The contribution of these states to the tunneling current is calculated.
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    Construction of a scanning tunneling microscope and first results
    (1990) Oral, Ahmet
    In this thesis, construction of a Scanning Tunneling Microscope in air is explained. A step motor sample approach mechanism and a tripod scanner are used in the construction. Atomic resolution images of graphite samples are obtained in both constant current and constant height modes. Loss of trigonal symmetry in some Graphite images are also observed. This anomaly is attributed to the multiple atom tip or slipped top layer of Graphite.
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    Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
    (Elsevier, 2012-07-27) Arslan, E.; Çakmak, H.; Özbay, Ekmel
    The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and Schottky barrier heights (SBHs), as determined by thermionic emission (TE), were a strong function of temperature and Φb0 show the unusual behavior of increasing linearly with an increase in temperature from 80 to 360 K for both Schottky contacts. The tunneling saturation ( JTU(0)) and tunneling parameters (E 0) were calculated for both Schottky contacts. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. The results indicate that the dominant mechanism of the charge transport across the Pt/p-InGaN and Pt/n-InGaN Schottky contacts are electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-360 K.
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    MIMIM photodetectors using plasmonically enhanced MIM absorbers
    (SPIE, 2017) Dereshgi, S. Abedini; Okyay, Ali Kemal
    We demonstrate super absorbing metal-insulator-metal (MIM) stacks and MIMIM photosensitive devices operating at visible and near-infrared (VIS-NIR) spectrum, where absorbing (top) MIM and photocollecting (bottom) MIM can be optimized separately. We investigate different bottom metals in absorbing MIM with nanoparticles realized by dewetting of silver thin film on top. While gold and silver have conventionally been considered the most appropriate plasmonic absorbers, we demonstrate different absorbing metals like aluminum and specifically chromium, with its plasma frequency happening at 850 nm, as more efficient layers for absorption. Absorption in chromium hits 82 percent around 1000 nm. We provide convincing evidences by doing reflection experiment and computational simulations for absorbing MIM part. We also suggest for the first time investigating electric loss tangent of metal or coherently, surface plasmon quality factor of absorbing metals which are reliable tools for engineering different metal layers. They reveal that despite the fact that gold and silver are good plasmonic scatterers in VIS-NIR and reliable absorbers in VIS region, they are not proper choices as absorbers for NIR applications. Once the most optimum absorbing design is pointed out, we integrate it on top of another metal-insulator to form an MIMIM photodetector with tunneling photocurrent path. The final optimized sample consisting of silver - hafnium oxide - chromium - aluminum oxide - silver nanoparticles (from bottom to top) has a dark current of 7nA and a photoresponsivity peak of 0.962 mA/W at 1000 nm and a full width at half maximum of 300 nm, while applied bias is 50 mV and device areas are 300 μm x 600 μm. This photoresponse shows 70 times enhancement compared to former reported spin coated rare nanoparticle MIMIMs.
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    Study of junction and bias parameters in readout of phase qubits
    (2012) Zandi H.; Safaei, S.; Khorasani, S.; Fardmanesh, M.
    The exact numerical solution of the nonlinear Ginzburg-Landau equation for Josephson junctions is obtained, from which the precise nontrivial current density and effective potential of the Josephson junctions are found. Based on the resulting potential well, the tunneling probabilities of the associated bound states are computed which are in complete agreement with the reported experimental data. The effects of junction and bias parameters such as thickness of the insulating barrier, cross sectional area, bias current, and magnetic field are fully investigated using a successive perturbation approach. We define and compute figures of merit for achieving optimal operation of phase qubits and measurements of the corresponding states. Particularly, it is found that Josephson junctions with thicker barriers yield better performance in measurements of phase qubits. The variations of characteristic parameters such as life time of the states due to the above considered parameters are also studied and discussed to obtain the appropriate configuration setup.

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