Browsing by Subject "Thermal analysis"

Now showing 1 - 4 of 4

Open Access
Fast unveiling of Tmax in GaN HEMT devices via the electrical measurement-assisted two-heat source model
(IEEE, 2022-04-07) Koçer, Hasan; Durna, Yılmaz; Güneş, Burak; Tendürüs, Gizem; Bütün, Bayram; Özbay, Ekmel
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices, which have wide application potential from power amplifiers to satellite, need to be thoroughly examined in terms of reliability in order to benefit the superior intrinsic properties of the device. The most critical parameter in the device reliability is the hotspot, or Tmax , which occurs somewhere on the subsurface and along the channel of the GaN HEMT, which is optically inaccessible due to optical path disability. Therefore, the Tmax value is underestimated in optical measurements, such as the thermographic IR and Raman methods. With 3-D electrothermal simulations, Tmax is obtained close to reality, but it requires a huge computation load and the complex modeling of semiconductor device physics. In 2-D or 3-D thermal simulations that do not use electrothermal simulations, since the self-heating is mostly modeled with a single heat source, neither the correct Tmax value is obtained nor the effect of bias conditions is considered. To address the aforementioned shortcomings, a hybrid method is demonstrated, which exploits the electrical measurements of GaN HEMT, which RF and reliability engineers often and easily do. It is demonstrated that Tmax can be determined quickly and close to the electrothermal simulations in a GaN HEMT device with a two-heat source method and finite element analysis (FEA) hybrid interaction with respect to various bias conditions. Moreover, the impact of the knee voltage is investigated with different knee-detection techniques. The proposed method provides GaN HEMT reliability engineers with an easy-to-implement alternative to reveal the hotspot location and the value.
Open Access
Improved Tmax estimation in GaN HEMTs using an equivalent hot point approximation
(IEEE, 2020) Odabaşı, Oğuz; Akar, Mehmet Ömer; Bütün, Bayram; Özbay, Ekmel
In this article, heat generation distribution and maximum device temperature of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) are investigated by using the 2-D electrothermal and finite-element method (FEM) simulations. Devices with different gate lengths and source-to-drain spacing are investigated. It is observed that the maximum device temperature (TMAX) depends on the drain-to-source spacing and is almost independent of the gate length and that the assumption of a uniform heat generation region, under the gate, is not accurate; this is contrary to conventional calculation methods. Moreover, based on the results, a new approximation is proposed to use in the FEM simulations that can estimate TMAX more accurately. This method does not require physics-based technology computer-aided design (TCAD) simulations and can work with a low mesh density. The performance is compared with prior methods.
Open Access
Thermodynamic parameters of Cs+ sorption on natural clays
(Akademiai Kiado Rt., 2002) Shahwan, T.; Erten, H. N.
The sorption behavior of Cs+ on kaolinite, chlorite-illite, and bentonite clays as a function of time, cation concentration, and temperature was studied using the radiotracer method. Sorption data were well represented by Freundlich and Dubinin-Radushkevich type isotherms. Bentonite was found to have the highest sorption capacity and the highest exchange affinity to Cs+. In all three cases Cs+ sorption was found to be exothermic with ΔH° (kJ/mol) -13, -8, -19 and ΔS° (J/mol·K) -15, 31, and -3 for kaolinite, chlorite-illite, and bentonite, respectively. Negative ΔG° values were obtained in all cases, indicating the spontaneity of sorption. The magnitudes of ΔG° suggest that ion exchange is the primary sorption mechanism.
Open Access
Uncovering the non-radiative thermal characteristics of a passive radiative cooler under real operating conditions
(Institute of Physics Publishing Ltd., 2022-12-12) Koçer, Hasan; Durna, Yılmaz; Işık, Halil; Soydan, Mahmut Can; Khalichi, Bahram; Ghobadi, Amir; Kurt, H.; Özbay, Ekmel
Passive radiative cooling (PasRadCool), which emits thermal energy from objects to deep cold space through atmospheric transparency, offers complementary and alternative green energy solutions for passive cooling of buildings, clothing, and renewable energy harvesting. Depending on the spectral emissive/absorptive properties of the unit under test (UUT), radiative heat exchanges occur between the UUT, atmosphere, and sun, while at the same time non-radiative heat exchange occurs. The performance of the PasRadCool is determined by the combined thermal and thermodynamic effects of both exchange mechanisms. Although the non-radiative heat exchange, which consists of conductive and convective processes to the outer surfaces of the UUT and the surrounding air fluid, is very sensitive to environmental changes, the actual performance is not fully determined since this feature is considered statically in many studies. Herein, we propose a method that reveals the non-radiative thermal characteristics of the PasRadCool under real operating conditions. With a photonic radiative cooler structure, which we manufacture as a proof of concept, we perform nighttime field test measurements in varying non-radiative thermal conditions. The proposed method extracts the time-dependent non-radiative heat transfer coefficient of the UUT as accurately as possible. We also confirm that our experimental result shows good agreement with both numerical and analytical methods. The proposed approach, which highlights the realistic thermal management of PasRadCool, is not specific to the circumstances of our study and can be applied to all PasRadCool situations with different geometry, material, and environmental conditions.