Browsing by Subject "Ternary alloys"

Filter results by typing the first few letters
Now showing 1 - 2 of 2
  • Thumbnail Image
    ItemOpen Access
    Homogeneity range of ternary 11-type chalcogenides Fe1 + yTe1−xSex
    (Springer, 2017) Koz, C.; Rößler, S.; Wirth, S.; Schwarz, U.
    The 11-type Fe-chalcogenides belong to the family of Fe-based superconductors. In these compounds, the interstitial Fe is known to strongly influence the magnetic and superconducting properties. Here, we present the chemical homogeneity range of ternary compounds Fe1 + yTe1−xSex based on powder x-ray diffraction, energy dispersive x-ray analysis, and magnetization measurements. Our investigations show that the maximum amount of excess Fe in homogeneous Fe1 + yTe1−xSex decreases with increase in Se substitution for Te. Using our synthesis procedure, single-phase Fe1 + yTe1−xSex, with 0.5 ≤ x < 1 could not be formed for any amount of excess Fe. Further, the superconducting volume fraction in the material is found to be strongly suppressed by excess Fe.
  • Thumbnail Image
    ItemOpen Access
    Hot electron effects in unipolar n-type submicron structures based on GaN, AlN and their ternary alloys
    (The Institution of Engineering and Technology, 2003) Sevik, C.; Bulutay, C.
    The authors present an analysis of impact ionisation (II) and related hot electron effects in submicron sized GaN, AlN and their ternary alloys, all of which can support very high field regimes, reaching a few megavolts per centimetre (MV/cm). The proposed high field transport methodology is based on the ensemble Monte Carlo technique, with all major scattering mechanisms incorporated. As a test-bed for understanding II and hot electron effects, an n+-n-n+ channel device is employed having a 0.1 μm thick n-region. The time evolution of the electron density along the device is seen to display oscillations in the unintentionally doped n-region, until steady state is established. The fermionic degeneracy effects are observed to be operational especially at high fields within the anode n+-region. For AlxGa1-xN-based systems, it can be noted that due to alloy scattering, carriers cannot acquire the velocities attained by the GaN and AlN counterparts. Finally, at very high fields II is shown to introduce a substantial energy loss mechanism for the energetic carriers that have just traversed the unintentionally doped n-region.