Browsing by Subject "Surface Photovoltage"

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    Photo-dynamic XPS for investigating photoinduced voltage changes in semiconducting materials
    (2011) Sezen, Hikmet
    The main motivation of this Ph.D. study is investigation of the photoinduced voltage changes in semiconductive materials with X-ray Photoelectron Spectroscopy (XPS). For this purpose, we have developed a technique for recording the shifts in the positions of the XPS peaks in response to different waveforms of electrical and/or optical stimuli for tracing dynamics of the developed potentials originating from intrinsic or extrinsic factors of the semiconductive materials such as charging/discharging, photoconductivity, surface photovoltage, band-bending/flattening/inversion, etc. Within this purpose, the surface photovoltage behaviors of n- and p-type doped Si and GaN samples are examined with the photo-dynamic XPS, to follow the behavior of the bandbending under photoillumination in both static and dynamic fashions. The band inversion effects are clearly observed on the n- and p-Si samples in the presence of a dielectric silica overlayer and on the p-GaN sample due to variation of the illuminating laser energies Moreover, the extent of the dopant dependent XPS peak shifts of the n- and p-Si samples are assessed after correction of their surface photovoltage values. A laser patterned silicon wafer with a high-power near infrared fiber laser is also investigated. While the patterned silica domains have identical chemical composition with the non-patterned regions, an investigation with dynamic XPS clearly reveals distinct dielectric characteristics of the patterned domains. Electrical parameters of CdS thin film are extracted by dynamic XPS with and without photoillumination. The photo-dynamic XPS technique has also provided useful information by disentanglement of processes; charging/discharging, photoconductivity, and surface photovoltage. Furthermore, location (space) dependent resistance and chemical profile of a CdS based Light Dependent Resistor (LDR) is also probed during realistic operational conditions, by utilizing spatially resolved XPS analysis (in the area mapping mode). In addition, with the XPS mapping analysis defects and malfunctioning sites/domains have been located under various experimental and preparation conditions.
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    Scanning probe microscopy for optoelectronic characterization at the nanoscale
    (2010) Ürel, Mustafa
    In this work, we propose methods for electrical characterization of nanostructured surfaces using electrostatic force and tunneling current measurements in scanning probe microscopy. Resolution smaller than 10 nm in electrostatic force microscopy (EFM) is attained and reasons for this attainment is explained in terms of the tip-sample capacitance and mechanical vibrations of tip design. Dynamic measurements are done in EFM using a lumped model for tip-sample electrostatic interaction instead of a simple tip-sample capacitance model. Surface photovoltage measurements are done and assured in EFM using frequency response techniques. Also, combining tunneling current measurements by EFM measurements, optoelectonic properties of graphene/graphene oxide samples are characterized.
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    XPS for probing the dynamics of surface voltage and photovoltage in GaN
    (Elsevier, 2014-12-30) Sezen, H.; Özbay, Ekmel; Süzer, Şefik
    We describe application of two different data gathering techniques of XPS for probing the dynamics of surface voltage and surface photovoltage (SPV) developed in microseconds to seconds time-domain, in addition to the conventional steady-state measurements. For the longer (seconds to milliseconds) regime, capturing the data in the snapshot fashion is used, but for the faster one (down to microseconds), square wave (SQW) electrical pulses at different frequencies are utilized to induce and probe the dynamics of various processes causing the surface voltage, including the SPV, via the changes in the peak positions. The frequency range covers anywhere from 10(-3) to 10(5) Hz for probing changes due to charging (slow), dipolar (intermediate), and electronic (fast) processes associated with the external stresses imposed. We demonstrate its power by application to n- and p-GaN, and discuss the chemical/physical information derived thereof. In addition, the method allows us to decompose and identify the peaks with respect to their charging nature for a composite sample containing both n- and p-GaN moieties.