Browsing by Subject "Superlattice"

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Open Access
Electrical performance of InAs/AlSb/GaSb superlattice photodetectors
(Academic Press, 2016) Tansel, T.; Hostut M.; Elagoz, S.; Kilic A.; Ergun, Y.; Aydınlı, Atilla
Temperature dependence of dark current measurements is an efficient way to verify the quality of an infrared detector. Low dark current density values are needed for high performance detector applications. Identification of dominant current mechanisms in each operating temperature can be used to extract minority carrier lifetimes which are highly important for understanding carrier transport and improving the detector performance. InAs/AlSb/GaSb based T2SL N-structures with AlSb unipolar barriers are designed for low dark current with high resistance and detectivity. Here we present electrical and optical performance of such N-structure photodetectors.
Open Access
Electronic and optical properties of 4.2 lm‘‘N’’ structured superlattice MWIR photodetectors
(Elsevier B.V., 2013-01-05) Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla
We report on the development of a new structure for type II superlattice photodiodes that we call the ‘‘N’’ design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier pushes the electron and hole wavefunctions towards the layer edges and under bias, increases the overlap integral by about 25% leading to higher detectivity. InAs/AlSb/GaSb superlattices were studied with density functional theory. Both AlAs and InSb interfaces were taken into account by calculating the heavy hole–light hole (HH–LH) splittings. Experiments were carried out on single pixel photodiodes by measuring electrical and optical performance. With cut-off wavelength of 4.2 lm at 120 K, temperature dependent dark current and detectivity measurements show that the dark current is 2.5 10 9 A under zero bias with corresponding R0A resistance of 1.5 104 X cm2 for the 500 500 lm2 single pixel square photodetectors. Photodetector reaches BLIP condition at 125 K with the BLIP detectivity (D BLIP) of 2.6 1010 Jones under 300 K background and 0.3 V bias voltage.
Open Access
Electronic and optical properties of 4.2 μm"N" structured superlattice MWIR photodetectors
(Elsevier, 2013) Salihoglu, O.; Hostut M.; Tansel, T.; Kutluer, K.; Kilic A.; Alyoruk, M.; Sevik, C.; Turan, R.; Ergun, Y.; Aydınlı, Atilla
We report on the development of a new structure for type II superlattice photodiodes that we call the "N" design. In this new design, we insert an electron barrier between InAs and GaSb in the growth direction. The barrier pushes the electron and hole wavefunctions towards the layer edges and under bias, increases the overlap integral by about 25% leading to higher detectivity. InAs/AlSb/GaSb superlattices were studied with density functional theory. Both AlAs and InSb interfaces were taken into account by calculating the heavy hole-light hole (HH-LH) splittings. Experiments were carried out on single pixel photodiodes by measuring electrical and optical performance. With cut-off wavelength of 4.2 μm at 120 K, temperature dependent dark current and detectivity measurements show that the dark current is 2.5 × 10 -9 A under zero bias with corresponding R0A resistance of 1.5 × 104 Ω cm2 for the 500 × 500 μm2 single pixel square photodetectors. Photodetector reaches BLIP condition at 125 K with the BLIP detectivity (DBLIP) of 2.6 × 10 10 Jones under 300 K background and -0.3 V bias voltage. © 2012 Elsevier B.V. All rights reserved.
Open Access
Electronic structure of low dimensional semiconductor systems
(1992) Gülseren, Oğuz
Recent progress made in the growth techniques has led to the fabrication of the artificial semiconductor systems of lower dimension. Electrons and holes in these materials have quantization different from those of the three dimensional systems presenting unusual electronic properties and novel device applications. In this work, the important features of the free carriers in semiconductor superlattices are examined, and the electronic structure of some novel 2D semiconductor systems are investigated theoretically. This thesis studies various systems of lower dimensionality such as: the strained Si/Ge superlattices, i-doping. Si (100) surface and the tip-sample interaction in scanning tunneling microscopy (STM) study of this surface, and Wannier-Stark localization in finite length superlattices. The electronic energy structure of pseudomorphic Ge„i/Si„ superlattices is investigated by using the empirical tight binding method. Effects of the band offset, sublattice periodicity and the lateral lattice constant on the transition energies have been investigated. It is found that Ge„i/Si„ superlattices grown on Ge (001) can have a direct band gap, if m + n = 10 and m = 6. However, optical matrix elements for in-plane and perpendicular polarized light are negligible for the transition from the highest valence band to the lowest conduction band state at the center of the superlattice Brillouin zone. The electronic structure of the Si i-layer in germanium is explored by using the Green’s function formalism with layer orbitals. We found two dimensional parabolic subbands near the band edges. This approach is extended to treat the electronic structure of a single quantum well without invoking the periodically repeating models. Quantum well formation in Ge,„Si„ superlattices is also studied by using different number of ^-layers. Subband structure is observed by changing the height of the Si quantum well. The confinement of acoustical modes within 2DEG due to only the electronphonon interaction is proposed. The confined modes split out from the bulk phonons, if the 2DEG is created by means of modulation doping. This occurs even if the lattice has uniform parameters. The effect is more pronounced when the wave vector q of the modes increases and is maximum a,t q = 2kp {kp is the Fermi wave vector). In the case of several electron sheets the additional features of the confinement effect appear. Green’s function method is also applied to treat the modifications of electronic state density in STM. The tip-sample interaction in STM study of Si (100) surface is explored by calculating the Gieen’s function within the empirical tight binding method. Both of the proposed reconstruction models, buckled and symmetrical dimer model, is investigated. A dip occurs in the change of density of states of surface atoms at the energy of surface states for small tip-sample distances, and it decreases with increasing tip-sample separation. Although, in-plane tip position (above the up- or down-surface atom) affects the surface atoms differently in buckled dimer model, it influences the surface atoms symmetrically in symmetric dimer model. Recent experimental studies revealed the significant information on the Wannier-Stark localization. Following these experimental results, the WannierStark ladder is investigated by carrying out numerical calculations on a multiple quantum well structure under an applied electric field. The variation of the Wannier-Stark ladder energies and localization of the corresponding wave II function are examined for a wide range of applied electric field. Our results show that Wannier-Stark ladder do exist for finite but periodic system which consists of a large number of quantum well having multi-miniband structure. It is found that the miniband states are localized in the well regions with the applied electric field, while the continuum states preserve their extended character. Energies of the well states show a linear shift with the electric field except the small field values in which a nonlinear shift is resulted. Multiband calculations show that there is a mixing between the different band states although they are localized in different well regions.
Open Access
Gibbs free energy assisted passivation layers
(SPIE, 2016) Salihoğlu, Ömer; Tansel, T.; Hoştut, M.; Ergun, Y.; Aydınlı, Atilla
Reduction of surface leakage is a major challenge in most photodetectors that requires the elimination of surface oxides on etched mesas during passivation. Engineering the passivation requires close attention to chemical reactions that take place at the interface during the process. In particular, removal of surface oxides may be controlled via Gibbs reactivity. We have compared electrical performance of type-II superlattice photodetectors, designed for MWIR operation, passivated by different passivation techniques. We have used ALD deposited Al2O3, HfO2, TiO2, ZnO, PECVD deposited SiO2, Si3N4 and sulphur containing octadecanethiol (ODT) selfassembled monolayers (SAM) passivation layers on InAs/GaSb p-i-n superlattice photodetectors with cutoff wavelength at 5.1 μm. In this work, we have compared the result of different passivation techniques which are done under same conditions, same epitaxial structure and same fabrication processes. We have found that ALD deposited passivation is directly related to the Gibbs free energy of the passivation material. Gibbs free energies of the passivation layer can directly be compared with native surface oxides to check the effectiveness of the passivation layer before the experimental study.
Open Access
Low dark current N structure superlattice MWIR photodetectors
(SPIE, 2014) Salihoğlu, O.; Muti, Abdullah; Turan, R.; Ergun, Y.; Aydınlı, Atilla
Commercially available read out integrated circuits (ROICs) require the FPA to have high dynamic resistance area product at zero bias (R0A) which is directly related to dark current of the detector. Dark current arises from bulk and surface contributions. Recent band structure engineering studies significantly suppressed the bulk contribution of the type-II superlattice infrared photodetectors (N structure, M structure, W structure). In this letter, we will present improved dark current results for unipolar barrier complex supercell superlattice system which is called as "N structure". The unique electronic band structure of the N structure increases electron-hole overlap under bias, significantly. N structure aims to improve absorption by manipulating electron and hole wavefunctions that are spatially separated in T2SLs, increasing the absorption while decreasing the dark current. In order to engineer the wavefunctions, we introduce a thin AlSb layer between InAs and GaSb layers in the growth direction which also acts as a unipolar electron barrier. Despite the difficulty of perfect lattice matching of InAs and AlSb, such a design is expected to reduce dark current. Experiments were carried out on Single pixel with mesa sizes of 100 × 100 - 700 × 700 μm photodiodes. Temperature dependent dark current with corresponding R0A resistance values are reported.
Open Access
Passivation of type II InAs / GaSb superlattice photodetectors with atomic layer deposited Al2O3
(SPIE, 2012) Salihoğlu, Ömer; Muti, Abdullah; Kutluer, K.; Tansel, T.; Turan, R.; Kocabaş, Coşkun; Aydınlı, Atilla
We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperature with uniform coating of ALD technique leads to a conformal and defect free coverage on the side walls. This conformal coverage of rough surfaces also satisfies dangling bonds more efficiently while eliminating metal oxides in a self cleaning process of the Al2O3 layer. Al2O3 passivated and unpassivated diodes were compared for their electrical and optical performances. For passivated diodes the dark current density was improved by an order of magnitude at 77 K. The zero bias responsivity and detectivity was 1.33 A/W and 1.9 x 1013 Jones, respectively at 4 µm and 77 K. Quantum efficiency (QE) was determined as %41 for these detectors.
Open Access
Thiol passivation of MWIR Type II superlattice photodetectors
(SPIE, 2013) Salihoğlu, Ömer; Muti, Abdullah; Aydınlı, Atilla
Poor passivation on photodetectors can result in catastrophic failure of the device. Abrupt termination of mesa side walls during pixel definition generates dangling bonds that lead to inversion layers and surface traps leading to surface leakage currents that short circuit diode action. Good passivation, therefore, is critical in the fabrication of high performance devices. Silicondioxide has been the main stay of passivation for commercial photodetectors, deposited at high temperatures and high RF powers using plasma deposition techniques. In photodetectors based on III-V compounds, sulphur passivation has been shown to replace oxygen and saturate the dangling bonds. Despite its effectiveness, it degrades over time. More effort is required to create passivation layers which eliminate surface leakage current. In this work, we propose the use of sulphur based octadecanethiol (ODT), CH3(CH2)17SH, as a passivation layer for the InAs/GaSb superlattice photodetectors that acts as a self assembled monolayer (SAM). ODT SAMs consist of a chain of 18 carbon atoms with a sulphur atom at its head. ODT Thiol coating is a simple process that consist of dipping the sample into the solution for a prescribed time. Excellent electrical performance of diodes tested confirm the effectiveness of the sulphur head stabilized by the intermolecular interaction due to van der Walls forces between the long chains of ODT SAM which results in highly stable ultrathin hydrocarbon layers without long term degradation. © 2013 SPIE.