Browsing by Subject "Structure and microstructures"

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Open Access
Electrical characteristics of β-Ga2O3 thin films grown by PEALD
(Elsevier, 2014) Altuntas, H.; Donmez, I.; Ozgit Akgun, C.; Bıyıklı, Necmi
In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed under N2 ambient at 600, 700, and 800 C to obtain β-phase. The structure and microstructure of the β-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of β-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/β-Ga2O3/p-Si metal-oxide- semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the β-Ga2O3 thin films were annealed at 800 C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (RS), ideality factor (n), zero-bias barrier height (Bo), and interface states (NSS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (ESS-EV) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (e), and RS into account. Also using the Norde function and C-V technique, e values were calculated and cross-checked. Results show that β-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and β-Ga2O3 oxide layer.
Open Access
Properties of high specific strength Al-4wt.% Al2O3/B4C nano-composite produced by accumulative roll bonding process
(Elsevier Ltd, 2013) Alizadeh, M.; beni H.A.; Ghaffari, M.; Amini, R.
The influence of nano-scale reinforcement on the mechanical and microstructural properties of ultrafine-grained composites was studied. Al matrix (pure aluminum) composites, with a grain size of 230nm and B4C and Al2O3 reinforcements with an average size of 50nm, were fabricated via the accumulative roll bonding (ARB) process. To evaluate structure and microstructure of the produced composites, X-ray diffraction analysis (XRD) and transmission electron microscopy (TEM) were applied. Mechanical properties of the specimens were investigated by tensile and hardness tests. The result revealed that in comparison with monolithic Al (ARBed Al without ceramic particles), the presence of nano-particles enhances specific strength of composites. Also, the results showed that with increasing ARB cycles, the microhardness of the composites increases. In addition, the specific strength and microhardness of the composite samples are higher than those of the monolithic Al. The density of the composite samples and monolithic Al was measured by the Archimedes method showing that the density decreases in presence of ceramic particles. © 2013 Elsevier Ltd.