Browsing by Subject "Silicon carbide"

Now showing 1 - 18 of 18

Open Access
A 6-18 GHz GaN power amplifier MMIC with high gain and high output power density
(IEEE, 2019) Sütbaş, Batuhan; Özipek, Ulaş; Gürdal, A.; Özbay, Ekmel
A three-stage reactively-matched 6-18 GHz power amplifier MMIC design is presented. The design effort is focused on obtaining a low-loss output matching network for a high output power density. Active unit cells consist of an 8×125 μm transistor stabilized with a symmetrical parallel RC circuit. The wideband amplifier is fabricated using our in-house 0.25 μm GaN on SiC HEMT process. The fabrication technology details and overall device performance are reported. Experimental results show that the MMIC has a minimum gain of 22 dB and a maximum gain of 26.5 dB across the operation band. An average output power density higher than 3.3W/mm with an associated average power-added efficiency of 22.5% is achieved. The MMIC demonstrates output power greater than 9.5 W at the center frequency. This design is distinguished from recent studies with its low-ripple high gain and high output power density.
Open Access
Anisotropic absorber and tunable source of MIR radiation based on a black phosphorus-SiC metasurface
(Elsevier BV, 2022-03-28) Hajian, Hodjat; Rukhlenko, I. D.; Hanson, G. W.; Özbay, Ekmel
We propose a black phosphorus-silicon carbide (BP-SiC) metasurface with in-plane structural symmetry that can act as both a nearly perfect anisotropic absorber and tunable polarized source of mid-infrared (MIR) radiation. The metasurface is a periodic array of square SiC patches integrated with a BP flake at the top and separated from a bottom reflector by a BaF2 spacer. We first use analytical calculations and numerical simulations to study the hybridization of the anisotropic plasmons of BP with isotropic phonons of SiC. We also analyze the in-plane characteristics of the resulting hybrid modes of the BP/SiC heterostructure and the BP-SiC metasurface. It is then demonstrated that the proposed metasurface can serve as a nearly perfect anisotropic absorber of MIR radiation with highly selective and omnidirectional features. It is also shown that the metasurface can be used as a polarized MIR source with tunable temperature, which is determined by the thermal equilibrium between the matter and radiation. The suggested design holds promise for artificial coatings that can tune the blackbody thermal signatures, MIR sensing, and highly directional in-plane transportation of the MIR energy.
Open Access
Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
(Springer New York LLC, 2017) Arslan, E.; Öztürk, M. K.; Tıraş, E.; Tıraş, T.; Özçelik, S.; Özbay, Ekmel
High-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low temperature AlN, high temperature AlN and AlxGa1−xN (x ≈ 0.67) layers were used in the buffer structures. The growth parameters of the buffer layers were optimized for obtaining a high-resistive GaN epilayer. The mosaic structure parameters, such as lateral and vertical coherence lengths, tilt and twist angle (and heterogeneous strain), and dislocation densities (edge and screw dislocations) of the high-resistive GaN epilayers have been investigated using x-ray diffraction measurements. In addition, the residual stress behaviors in the high-resistive GaN epilayers were determined using both x-ray diffraction and Raman measurements. It was found that the buffer structures between the HR-GaN and SiC substrate have been found to have significant effect on the surface morphology and the mosaic structures parameters. On the other hand, both XRD and Raman results confirmed that there is low residual stress in the high-resistive GaN epilayers grown on different buffer structures.
Open Access
Computer-controlled characterization of high-voltage, high-frequency SiC devices?
(IEEE, 2006) Ortiz-Rodriguez, J. M.; Hefner, A. R.; Berning, D.; Hood, C.; Ölçüm, Selim
A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows archiving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system.
Open Access
Conversion of wooden structures into porous SiC with shape memory synthesis
(2011) Dhiman, R.; Petrunin V.; Rana, K.; Morgen P.
Synthesis of structured silicon carbide materials can be accomplished using wooden materials as the carbon source, with various silicon impregnation techniques. We have explored the low cost synthesis of SiC by impregnation of carbon from wood with SiO gas at high temperatures, which largely retains the structure of the starting wood (shape memory synthesis). Suitably structured, porous SiC could prove to be an important type of catalyst support material. Shape memory synthesis (SMS) has earlier been tried on high surface area carbon materials. Here we have made an extensive study of SMS on carbon structures obtained from different types of wood. © 2011 Elsevier Ltd and Techna Group S.r.l.
Open Access
Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors
(IEEE, 2009-10) Bütün, Serkan; Gökkavas, Mutlu; Yu, HongBo; Strupinski, Vlodek; Özbay, Ekmel
Photodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.
Open Access
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H-SiC
(Elsevier, 2010-09-25) Caban, P.; Strupinski, W.; Szmidt, J.; Wojcik, M.; Gaca, J.; Kelekci, O.; Caliskan, D.; Özbay, Ekmel
The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4HSiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.
Open Access
The effect of iron on the surface graphitization of silicon carbide
(World Scientific, 2020) Mercan, Elif; Cambaz-Büke, G.
In order to decrease the decomposition temperature of SiC, 12nm Fe thin film is applied on SiC substrates as a catalyst layer using electron beam (e-beam) deposition. To investigate the mechanism of Fe-treated SiC decomposition, local Fe regions are formed through dewetting of the catalyst layer by hydrogen annealing. The results show that Fe decreases the decomposition temperature of SiC effectively and increases the kinetics of the graphitization. Studies showed that depending on the amount of Fe, crumpled and ordered graphene films can be synthesized simultaneously on SiC by using this method.
Open Access
Effective mass of electron in monolayer graphene: Electron-phonon interaction
(AIP Publishing LLC, 2013-01-25) Tiras, E.; Ardali, S.; Tiras, T.; Arslan, E.; Cakmakyapan, S.; Kazar, O.; Hassan, J.; Janzén, E.; Özbay, Ekmel
Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.
Open Access
High power K-band GaN on SiC CPW monolithic power amplifier
(IEEE, 2014-10) Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel
This paper presents a high power amplifier at K-band (20.2-21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space. © 2014 European Microwave Association.
Open Access
Pseudopotential-based full zone k · p technique for indirect bandgap semiconductors: Si, Ge, diamond and SiC
(TÜBİTAK, 2006) Bulutay, Ceyhun
The k · p is a versatile technique that describes the semiconductor band structure in the vicinity of the bandgap. The technique can be extended to full Brillouin zone by including more coupled bands into consideration. For completeness, a detailed formulation is provided where the associated k · p parameters are extracted from the local empirical pseudopotential method in the form of band edge energies and generalized momentum matrix elements. We demonstrate the systematic improvement of the technique with the proper choice of the band edge states for the group-IV indirect bandgap semiconductors: Si, Ge, diamond and SiC of the 30 cubic phase. The full zone agreement is observed to span an energy window of more than 20 eV for Si, and 40 eV for the diamond with the 15-band pseudopotential-based k · p approach. © TÜBİTAK.
Open Access
Relaxations of fluorouracil tautomers by decorations of fullerene-like SiCs: DFT studies
(Elsevier, 2016-06) Kouchaki, A.; Gülseren, O.; Hadipour, N.; Mirzaei, M.
Decorations of silicon carbide (SiC) fullerene-like nanoparticles by fluorouracil (FU) and its tautomers are investigated through density functional theory (DFT) calculations. Two models of fullerene-like particles including Si12C8 and Si8C12 are constructed to be counterparts of decorated hybrid structures, FU@Si12C8 and FU@Si8C12, respectively. The initial models including original FU and tautomeric structures and SiC nanoparticles are individually optimized and then combined for further optimizations in the hybrid forms. Covalent bonds are observed for FU@Si12C8 hybrids, whereas non-covalent interactions are seen for FU@Si8C12 ones. The obtained properties indicated that Si12C8 model could be considered as a better counterpart for interactions with FU structures than Si8C12 model. The results also showed significant effects of interactions on the properties of atoms close to the interacting regions in nanoparticles. Finally, the tautomeric structures show different behaviors in interactions with SiC nanoparticles, in which the SiC nanoparticles could be employed to detect the situations of tautomeric processes for FU structures.
Open Access
Resonance broadening and tuning of split ring resonators by top-gated epitaxial graphene on SiC substrate
(AIP Publishing LLC, 2013) Cakmakyapan, S.; Sahin, L.; Pierini, F.; Strupinski, W.; Özbay, Ekmel
Split ring resonators (SRRs) are subwavelength structures that are able to localize and enhance the electromagnetic wave. Controlling the plasmonic resonance behavior of metallic nanostructures, such as SRRs, plays an important role in optoelectronics and nanophotonics applications. Electrically tunable carrier concentration of graphene provides hybrid devices, where the plasmonic structures and graphene are combined. In this paper, we report the design, fabrication, and measurement of a device comprising a SRR array on epitaxial graphene. We obtained resonance broadening and tuning of split ring resonators by utilizing an epitaxial graphene transistor with transparent top-gate.
Open Access
Study of the power performance of gaN based HEMTs with varying field plate lengths
(North Atlantic University Union, 2015) Kurt G.; Toprak, A.; Sen O.A.; Özbay, Ekmel
In this paper, we report the optimum power performance of GaN based high-electron-mobility-transistors (HEMTs) on SiC substrate with the field plates of various dimensions. The AlGaN/GaN HEMTs are fabricated with 0.6 µm gate length, 3 µm drain-source space. And also, the field plate structures with the lengths of 0.2, 0.3, 0.5, and 0.7 µm have been fabricated on these HEMTs. Great enhancement in radio frequency (RF) output power density was achieved with acceptable compromise in small signal gain. A HEMT of 0.5 µm field plate length and 800 µm gate width is biased under 35 V, at 3 dB gain compression, The results showed that we obtained a continuous wave output power of 36.2 dBm (5.2 W/mm), power-added efficiency (PAE) of 33% and a small signal gain of 11.4 dB from this device. We also could achieve a continuous wave output power of 37.2 dBm (5.2 W/mm), poweradded efficiency (PAE) of 33.7% and a small gain of 10.7 dB from another HEMT with 0.5 µm field plate length and 1000 µm gate width. These results were obtained at 8 GHz without using a via hole technology. The results seem very stunning in this respect. © 2015, North Atlantic University Union. All rights reserved.
Open Access
Surface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene properties
(Trans Tech Publications, Switzerland, 2013) Ul Hassan J.; Meyer, A.; Çakmakyapan, Semih; Kazar, Özgür; Flege J.I.; Falta J.; Özbay, Ekmel; Janzén, E.
The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions. © (2013) Trans Tech Publications, Switzerland.
Open Access
Synthesis, characterization, and wear and friction properties of variably structured SiC/Si elements made from wood by molten Si impregnation
(2012) Dhiman, R.; Rana, K.; Bengu, E.; Morgen P.
We have synthesized pre-shaped SiC/Si ceramic material elements from charcoal (obtained from wood) by impregnation with molten silicon, which takes place in a two-stage process. In the first process, a porous structure of connected micro-crystals of β-SiC is formed, while, in the second process, molten Si totally or partly infiltrates the remaining open regions. This process forms a dense material with cubic (β-)SiC crystallites, of which the majority is imbedded in amorphous Si. The synthesis of preshaped "sprocket" elements demonstrates that desired shapes of such a dense SiC/Si composite ceramic material can be achieved, thus suggesting new industrial applications. The structure and composition of numerous as-synthesized samples were characterized in detail by using a wide range of techniques. Wear and friction properties were also investigated, with polished samples. The properties found for the present samples are very promising for abrasive applications and for new generation brake systems. © 2011 Elsevier Ltd.
Open Access
Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier
(IEEE, 2004-10) Schwindt, R. S.; Kumar, V.; Aktaş, Ozan; Lee, J.-W.; Adesida, I.
The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.
Open Access
Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C-and Si-faces of SiC
(American Institute of Physics Inc., 2015) Aydogan, P.; Arslan, E.; Cakmakyapan, S.; Özbay, Ekmel; Strupinski, W.; Süzer, Şefik
We report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphene layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.