Browsing by Subject "Selective deposition"

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    Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: A case study for metal oxides
    (American Chemical Society, 2016) Haider, A.; Deminskyi, P.; Khan, T. M.; Eren, H.; Bıyıklı, Necmi
    Area-selective atomic layer deposition (AS-ALD) has attracted immense attention in recent years for self-aligned accurate pattern placement with subnanometer thickness control. Here, we demonstrate a methodology to achieve AS-ALD by using inductively couple plasma (ICP) grown fluorocarbon polymer film as hydrophobic blocking layer for selective deposition. Our approach has been tested for metal-oxide materials including ZnO, Al2O3, and HfO2. Contact angle, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometer, and scanning electron microscopy (SEM) measurements were performed to investigate the blocking ability of plasma polymerized fluorocarbon layers against ALD-grown metal-oxide films. A considerable growth inhibition for ZnO has been observed on fluorocarbon coated Si(100) surfaces, while the same polymerized surface caused a relatively slow nucleation for HfO2 films. No growth selectivity was obtained for Al2O3 films, displaying almost the same nucleation behavior on Si and fluorocarbon surfaces. Thin film patterning has been demonstrated using this strategy by growing ZnO on lithographically patterned fluorocarbon/Si samples. High resolution SEM images and XPS line scan confirmed the successful patterning of ZnO up to a film thickness of ∼15 nm. © 2016 American Chemical Society.
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    Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers
    (Royal Society of Chemistry, 2016) Haider A.; Yilmaz, M.; Deminskyi, P.; Eren, H.; Bıyıklı, Necmi
    Here, we report nano-patterning of TiO2via area selective atomic layer deposition (AS-ALD) using an e-beam patterned growth inhibition polymer. Poly(methylmethacrylate) (PMMA), polyvinylpyrrolidone (PVP), and octafluorocyclobutane (C4F8) were the polymeric materials studied where PMMA and PVP were deposited using spin coating and C4F8 was grown using inductively coupled plasma (ICP) polymerization. TiO2 was grown at 150 °C using tetrakis(dimethylamido) titanium (TDMAT) and H2O as titanium and oxygen precursors, respectively. Contact angle, scanning electron microscopy (SEM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy (XPS) measurements were performed to investigate the blocking/inhibition effectiveness of polymer layers for AS-ALD of TiO2. TiO2 was grown with different numbers of growth cycles (maximum = 1200 cycles) on PMMA, PVP, and C4F8 coated substrates, where PMMA revealed complete growth inhibition up to the maximum number of growth cycles. On the other hand, PVP was able to block TiO2 growth up to 300 growth cycles only, whereas C4F8 showed no TiO2-growth blocking capability. Finally, mm-, μm-, and nm-scale patterned selective deposition of TiO2 was demonstrated exploiting a PMMA masking layer that has been patterned using e-beam lithography. SEM, energy-dispersive X-ray spectroscopy (EDX) line scan, EDX elemental mapping, and XPS line scan measurements cumulatively confirmed the self-aligned deposition of TiO2 features. The results presented for the first time demonstrate the feasibility of achieving self-aligned TiO2 deposition via TDMAT/H2O precursor combination and e-beam patterned PMMA blocking layers with a complete inhibition for >50 nm-thick films.