Browsing by Subject "Schottky barriers"

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    Forward tunneling current in Pt/p-InGaN and Pt/n-InGaN Schottky barriers in a wide temperature range
    (Elsevier, 2012-07-27) Arslan, E.; Çakmak, H.; Özbay, Ekmel
    The current-transport mechanisms of the Pt contacts on p-InGaN and n-InGaN were investigated in a wide temperature range (80-360 K) and in the forward bias regime. It was found that the ideality factor (n) values and Schottky barrier heights (SBHs), as determined by thermionic emission (TE), were a strong function of temperature and Φb0 show the unusual behavior of increasing linearly with an increase in temperature from 80 to 360 K for both Schottky contacts. The tunneling saturation ( JTU(0)) and tunneling parameters (E 0) were calculated for both Schottky contacts. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. The results indicate that the dominant mechanism of the charge transport across the Pt/p-InGaN and Pt/n-InGaN Schottky contacts are electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-360 K.
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    Operation of carbon nanotube thin-film transistors at elevated temperatures
    (IEEE, 2009-12) Öztürk, Sadi; Doğan, Mustafa; Aktaş, Özgür
    The authors study the operation of carbon nanotube thin-film transistors (CNT-TFT) at elevated temperatures. Due to the small bandgap of semiconducting carbon nanotubes, CNT-TFTs are not suitable to be developed as high-temperature devices. However, CNT-TFTs will still have to endure elevated temperatures when employed in large-area and flexible electronic applications. The temperature range that can be expected in these applications is well below 100°C. In this work, the authors demonstrate that even at 100°C, CNT-TFT devices are operational but with a reduced ON/OFF ratio. Beyond 100°C, the ON/OFF ratio degrades rapidly.