Browsing by Subject "Root mean squares"

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    Heating of magnetic fluid systems driven by circularly polarized magnetic field
    (Elsevier BV * North-Holland, 2010) Ahsen, O. O.; Yilmaz, U.; Aksoy, M. Deniz; Ertas, G.; Atalar, Ergin
    A theory is presented to calculate the heat dissipation of a magnetic suspension, a ferrofluid, driven by circularly polarized magnetic field. Theory is tested by in vitro experiments and it is shown that, regardless of the character of the relaxation process, linearly and circularly polarized magnetic field excitations, having the same root-mean-square magnitude, are equivalent in terms of heating efficiency.
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    ItemOpen Access
    Selective-area high-quality germanium growth for monolithic integrated optoelectronics
    (Institute of Electrical and Electronics Engineers, 2012-03-02) Yu, H. Y.; Park, J. H.; Okyay, Ali Kemal; Saraswat, K. C.
    Selective-area germanium (Ge) layer on silicon (Si) is desired to realize the advanced Ge devices integrated with Si very-large-scale-integration (VLSI) components. We demonstrate the area-dependent high-quality Ge growth on Si substrate through SiO 2 windows. The combination of area-dependent growth and multistep deposition/hydrogen annealing cycles has effectively reduced the surface roughness and the threading dislocation density. Low root-mean-square surface roughness of 0.6 nm is confirmed by atomic-force-microscope analysis. Low defect density in the area-dependent grown Ge layer is measured to be as low as 1 × 10 7cm -2 by plan-view transmission-electron-miscroscope analysis. In addition, the excellent metal-semiconductor-metal photodiode characteristics are shown on the grown Ge layer to open up a possibility to merge Ge optoelectronics with Si VLSI.