Browsing by Subject "Reliability enhancement"

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Open Access
NS-SRAM: neighborhood solidarity SRAM for reliability enhancement of SRAM memories
(IEEE, 2016-08-09) Alouani, I.; Ahangari, Hamzeh; Öztürk, Özcan; Niar, S.
Technology shift and voltage scaling increased the susceptibility of Static Random Access Memories (SRAMs) to errors dramatically. In this paper, we present NS-SRAM, for Neighborhood Solidarity SRAM, a new technique to enhance error resilience of SRAMs by exploiting the adjacent memory bit data. Bit cells of a memory line are paired together in circuit level to mutually increase the static noise margin and critical charge of a cell. Unlike existing techniques, NS-SRAM aims to enhance both Bit Error Rate (BER) and Soft Error rate (SER) at the same time. Due to auto-adaptive joiners, each of the adjacent cells' nodes is connected to its counterpart in the neighbor bit. NS-SRAM enhances read-stability by increasing critical Read Static Noise Margin (RSNM), thereby decreasing faults when circuit operates under voltage scaling. It also increases hold-stability and critical charge to mitigate soft-errors. By the proposed technique, reliability of SRAM based structures such as cache memories and register files can drastically be improved with comparable area overhead to existing hardening techniques. Moreover it does not require any extra-memory, does not impact the memory effective size, and has no negative impact on performance. © 2016 IEEE.
Open Access
Register file reliability enhancement through adjacent narrow-width exploitation
(IEEE, 2016-04) Ahangari, Hamzeh; Alouani, I.; Öztürk, Özcan; Niar, S.; Rivenq, A.
Due to the increasing vulnerability of CMOS circuits, new generations of microprocessors require an inevitable focus on reliability issues. As the Register File (RF) constitutes a critical element within the processor pipeline, it is mandatory to enhance the RF reliability to develop fault tolerant architectures. This paper proposes Adjacent Register Hardened RF (ARH), a new RF architecture that exploits the adjacent byte-level narrow-width values for hardening registers at runtime. Registers are paired together by some special switches referred to as joiners. Dummy sign bits of each register are used to keep redundant data of its counterpart register. We use 7T/14T SRAM cell [6] to combine redundant bits together to make a single bit cell which is, by far, more resilient against faults. Our simulations show that with 3% to 12% power overhead and 10% to 20% increase in area, in comparison to baseline RF, we can obtain up to 80% reduction in soft error rate (SER). © 2016 IEEE.