Browsing by Subject "Red shift"

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    Non-universal behavior of leaky surface waves in a one dimensional asymmetric plasmonic grating
    (American Institute of Physics Inc., 2015) Vempati S.; Iqbal, T.; Afsheen, S.
    We report on a non-universal behavior of leaky surface plasmon waves on asymmetric (Si/Au/analyte of different height) 1D grating through numerical modelling. The occurrence of the leaky surface wave was maximized (suppressing the Fabry-Perot cavity mode), which can be identified in a reflection spectrum through characteristic minimum. Beyond a specific analyte height (h), new sets of surface waves emerge, each bearing a unique reflection minimum. Furthermore, all of these minima depicted a red-shift before saturating at higher h values. This saturation is found to be non-universal despite the close association with their origin (being leaky surface waves). This behavior is attributed to the fundamental nature and the origin of the each set. Additionally, all of the surface wave modes co-exit at relatively higher h values. © 2015 AIP Publishing LLC.
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    Optically implemented broadband blueshift switch in the terahertz regime
    (American Physical Society, 2011-01-18) Shen, N. H.; Massaouti, M.; Gokkavas, M.; Manceau J. M.; Özbay, Ekmel; Kafesaki, M.; Koschny, T.; Tzortzakis, S.; Soukoulis, C. M.
    We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.