Browsing by Subject "Recombination"
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Item Open Access DNA end-independent activation of DNA-PK mediated via association with the DNA-binding protein C1D(1998) Yavuzer, U.; Smith, G. C. M.; Bliss, T.; Werner, D.; Jackson, S. P.DNA-dependent protein kinase (DNA-PK), which is involved in DNA double- strand break repair and V(D)J recombination, is comprised of a DNA-targeting component termed Ku and an ~465-kD catalytic subunit, DNA-PK(cs). Although DNA-PK phosphorylates proteins in the presence of DSBs or other discontinuities in the DNA double helix in vitro, the possibility exists that it is also activated in other circumstances via its association with additional proteins. Here, through use of the yeast two-hybrid screen, we discover that the recently identified high affinity DNA binding protein C1D interacts with the putative leucine zipper region of DNA-PK(cs). Furthermore, we show that C1D can interact with DNA-PK in mammalian cells and that C1D is a very effective DNA-PK substrate in vitro. Finally, we establish that C1D directs the activation of DNA-PK in a manner that does not require DNA termini. Therefore, these studies provide a function for C1D and suggest novel mechanisms for DNA-PK activation in vivo.Item Open Access Enhanced efficiency of solution-processed small-molecule solar cells upon incorporation of gold nanospheres and nanorods into organic layers(Royal Society of Chemistry, 2014) Xu, X.; Kyaw, A. K. K.; Peng, B.; Du, Q.; Hong, L.; Demir, Hilmi Volkan; Wong, T. K. S.; Xiong, Q.; Sun, X. W.The significantly enhanced performance upon incorporation of Au nanoparticles in solution-processed small-molecule solar cells is demonstrated. Simultaneously incorporating Au nanospheres into the hole transport layer and Au-silica nanorods into the active layer results in superior broadband absorption improvement in the device with a power conversion efficiency of 8.72% with 31% enhancement.Item Open Access Low-temperature photoluminescence spectra of layered semiconductor TlGaS2(Pergamon Press, 1998) Gasanly, N. M.; Aydınlı, Atilla; Bek, A.; Yilmaz, I.Photoluminescence (PL) spectra of TlGaS2 layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 × 10-2 to 9 W cm-2. The A- and B-bands were found to be due to radiative transitions from the deep donor levels located at 0.362 and 0.738 eV below the bottom of the conduction band to the shallow acceptor levels at 0.005 and 0.085 eV located above the top of the valence band, respectively. The proposed energy-level diagram permits us to interpret the recombination processes in TlGaS2 layered single crystals. © 1997 Elsevier Science Ltd.