Browsing by Subject "Raman measurements"

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    Buffer effects on the mosaic structure of the HR-GaN grown on 6H-SiC substrate by MOCVD
    (Springer New York LLC, 2017) Arslan, E.; Öztürk, M. K.; Tıraş, E.; Tıraş, T.; Özçelik, S.; Özbay, Ekmel
    High-resistive GaN (>108 Ω cm) layers have been grown with different buffer structures on 6H-SiC substrate using metalorganic chemical vapor deposition reactor. Different combination of the GaN/AlN super lattice, low temperature AlN, high temperature AlN and AlxGa1−xN (x ≈ 0.67) layers were used in the buffer structures. The growth parameters of the buffer layers were optimized for obtaining a high-resistive GaN epilayer. The mosaic structure parameters, such as lateral and vertical coherence lengths, tilt and twist angle (and heterogeneous strain), and dislocation densities (edge and screw dislocations) of the high-resistive GaN epilayers have been investigated using x-ray diffraction measurements. In addition, the residual stress behaviors in the high-resistive GaN epilayers were determined using both x-ray diffraction and Raman measurements. It was found that the buffer structures between the HR-GaN and SiC substrate have been found to have significant effect on the surface morphology and the mosaic structures parameters. On the other hand, both XRD and Raman results confirmed that there is low residual stress in the high-resistive GaN epilayers grown on different buffer structures.
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    Cubic-phase zirconia nano-island growth using atomic layer deposition and application in low-power charge-trapping nonvolatile-memory devices
    (Institute of Physics Publishing Ltd., 2017) El-Atab, N.; Ulusoy, T. G.; Ghobadi, A.; Suh, J.; Islam, R.; Okyay, Ali Kemal; Saraswat, K.; Nayfeh, A.
    The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer deposition on different substrate terminations. Transmission electron microscopy and Raman measurements indicate that the nano-islands consist of nano-crystallites of the cubic-crystalline phase, which results in a higher dielectric constant (κ ∼ 35) than the amorphous phase case (κ ∼ 20). X-ray photoelectron spectroscopy measurements show that a deep quantum well is formed in the Al2O3/ZrO2/Al2O3 system, which is substantially different to that in the bulk state of zirconia and is more favorable for memory application. Finally, a memory device with a ZrO2 nano-island charge-trapping layer is fabricated, and a wide memory window of 4.5 V is obtained at a low programming voltage of 5 V due to the large dielectric constant of the islands in addition to excellent endurance and retention characteristics.
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    Photopatterning of PMMA films with gold nanoparticles: diffusion of AuCl4-ions
    (2010) Yilmaz, E.; Ertas, G.; Bengu, E.; Süzer, Şefik
    Photopatterning of poly(methyl methacrylate) (PMMA) films is performed by UV irradiation of the polymer films containing uniformly distributed AuCl 4 - ions. The process reduces the gold ions and leads to production of Au nanoparticles in the irradiated regions at room temperature (RT). Resulting films are investigated with scanning electron microscopy, which revealed, in addition to regions with gold nanoparticles, the presence of "ion-depleted regions". These regions are formed at RT and within the rigid polymer matrix by diffusion of gold ions toward the irradiated regions, ending up with no or very little gold moieties, which are important for prevention of delayed processes for postgeneration of unwanted features, if and when such materials are utilized for device production. Further investigations performed by fluorescence and Raman measurements and XPS mapping give additional evidence supporting the existence of such regions. Similar regions are also observed within the poly(vinyl alcohol) (PVAL) films. The ion-depleted regions are about 10 μm wide, which is a significant length for the metal ions to travel through a rigid matrix like PMMA (or PVAL) at room temperature and raises important questions as to the diffusion mechanism(s) of the metal ions and to the nature of the driving force(s).