Browsing by Subject "Quenching"

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    Broadband optical transparency in plasmonic nanocomposite polymer films via exciton-plasmon energy transfer
    (OSA - The Optical Society, 2016) Dhama R.; Rashed, A. R.; Caligiuri V.; El Kabbash M.; Strangi, G.; De Luca A.
    Inherent absorptive losses affect the performance of all plasmonic devices, limiting their fascinating applications in the visible range. Here, we report on the enhanced optical transparency obtained as a result of the broadband mitigation of optical losses in nanocomposite polymeric films, embedding core-shell quantum dots (CdSe@ZnS QDs) and gold nanoparticles (Au-NPs). Exciton-plasmon coupling enables non-radiative energy transfer processes from QDs to metal NPs, resulting in gain induced transparency of the hybrid flexible systems. Experimental evidences, such as fluorescence quenching and modifications of fluorescence lifetimes confirm the presence of this strong coupling between plexcitonic elements. Measures performed by means of an ultra-fast broadband pump-probe setup demonstrate loss compensation of gold NPs dispersed in plastic network in presence of gain. Furthermore, we compare two films containing different concentrations of gold NPs and same amount of QDs, to investigate the role of acceptor concentration (Au-NPs) in order to promote an effective and efficient energy transfer mechanism. Gain induced transparency in bulk systems represents a promising path towards the realization of loss compensated plasmonic devices. © 2016 Optical Society of America.
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    Colloidal nanoplatelet/conducting polymer hybrids: excitonic and material properties
    (American Chemical Society, 2016) Guzelturk, B.; Menk, F.; Philipps, K.; Kelestemur Y.; Olutas M.; Zentel, R.; Demir, Hilmi Volkan
    Here we present the first account of conductive polymer/colloidal nanoplatelet hybrids. For this, we developed DEH-PPV-based polymers with two different anchor groups (sulfide and amine) acting as surfactants for CdSe nanoplatelets, which are atomically flat semiconductor nanocrystals. Hybridization of the polymers with the nanoplatelets in the solution phase was observed to cause strong photoluminescence quenching in both materials. Through steady-state photoluminescence and excitation spectrum measurements, photoluminescence quenching was shown to result from dominant exciton dissociation through charge transfer at the polymer/nanoplatelet interfaces that possess a staggered (i.e., type II) band alignment. Importantly, we found out that sulfide-based anchors enable a stronger emission quenching than amine-based ones, suggesting that the sulfide anchors exhibit more efficient binding to the nanoplatelet surfaces. Also, shorter surfactants were found to be more effective for exciton dissociation as compared to the longer ones. In addition, we show that nanoplatelets are homogeneously distributed in the hybrid films owing to the functional polymers. These nanocomposites can be used as building blocks for hybrid optoelectronic devices, such as solar cells.
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    Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity
    (Pergamon Press, 1998) Gasanly, N. M.; Serpengüzel, A.; Gürlü, O.; Aydınlı, A.; Yılmaz, I.
    The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. © 1998 Elsevier Science Ltd. All rights reserved.
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    Infrared photoluminescence from TlGaS2 layered single crystals
    (Wiley - V C H Verlag GmbH & Co., 2004) Yuksek, N. S.; Gasanly, N. M.; Aydınlı, Atilla; Ozkan, H.; Acikgoz, M.
    Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm-2. The proposed energy-level diagram allows us to interpret the recombination processes in TlGaS2 crystals.
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    Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal
    (Elsevier Science Publishers B.V., Amsterdam, Netherlands, 2000) Gasanly, N. M.; Serpengüzel, A.; Aydınlı, A.; Baten, S. M. A.
    The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature. 0.2-15.2 W cm-2 excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. Analysis of the data indicates that the PL band is due to donor-acceptor recombination. A shallow acceptor level and a moderately deep donor level are, respectively, introduced at 0.012 eV above the top of the valence band and at 0.317 eV below the bottom of the conduction band. An energy-level diagram for radiative donor-acceptor pair recombination in TlGaSe2 layered single crystals is proposed.
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    Nanocrystal integrated light emitting diodes based on radiative and nonradiative energy transfer for the green gap
    (IEEE, 2009) Nizamoğlu, Sedat; Sarı, Emre; Baek J.-H.; Lee I.-H.; Demir, Hilmi Volkan
    Recently the photometric conditions for ultra-efficient solid-state lighting have been discussed [1-2]. These studies show that a luminous efficacy of optical radiation at 408 lm/Wopt and a color rendering index (CRI) of 90 at a correlated color temperature (CCT) of 3000 K are achievable at the same time. For this purpose light emitting diodes (LEDs) emitting in blue, green, yellow, and red colors at 463, 530, 573, and 614 nm with relative optical power levels of 1/8, 2/8, 2/8, and 3/8, are required, respectively [1-2]. Although InxGa1-xN material system is capable to cover the whole visible by changing the In composition (x), it is technically extremely challenging to obtain efficient green/yellow light emitting diodes especially at those wavelengths (i.e., at 530 nm and 573 nm, respectively) due to reduced internal quantum efficiency [2-4]. Furthermore, by using the (Al xGa1-x)1-yInyP quaternary alloy it is also possible to cover from 650 nm to 580 nm. However, the efficiencies significantly decrease towards green. Therefore, there exists a significant gap in the green-yellow spectral regions (known as "the green gap") to make efficient light emitting diodes. To address this green gap problem, we propose and demonstrate proof-of-concept nanocrystal (NCs) hybridized green/yellow light emitting diodes that rely on both radiative energy transfer and nonradiative energy transfer (i.e., FRET-Förster resonance energy transfer) for color conversion on near-ultraviolet (near-UV) LEDs.
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    Template-free synthesis of organically modified silica mesoporous thin films for TNT sensing
    (American Chemical Society, 2010) Yildirim, A.; Budunoglu, H.; Deniz, H.; Güler, Mustafa O.; Bayındır, Mehmet
    In this paper, we present a facile, template-free sol−gel method to produce fluorescent and highly mesoporous organically modified silica (ORMOSIL) thin films for vapor phase sensing of TNT. An alkyltrifunctional, methyltrimethoxysilane MTMS precursor was used to impart hydrophobic behavior to gel network in order to form the spring back effect. In this way, porous films (up to 74% porosity) are obtained at ambient conditions. Fluorescent molecules are physically encapsulated in the ORMOSIL network during gelation. Fluorescence of the films was found to be stable even after 3 months, proving the successful fixing of the dye into the ORMOSIL network. The functional ORMOSIL thin films exhibited high fluorescence quenching upon exposition to TNT and DNT vapor. Fluorescence quenching responses of the films are thickness-dependent and higher fluorescence quenching efficiency was observed for the thinnest film (8.6% in 10 s). The prepared mesoporous ORMOSIL thin films have great potential in new sensor and catalysis applications.