Browsing by Subject "Quantitative mobility spectrum analysis"

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    Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal Organic Chemical Vapor Deposition
    (Elsevier BV, 2008-02-29) Acar, S.; Lisesivdin, S. B.; Kasap, M.; Özcelik, S.; Özbay, Ekmel
    Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20-300 K) and magnetic field (0-1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. The mobility and density of the two-dimensional electron gas at the AlGaN/GaN interface and the two-dimensional hole gas at the GaN/AIN interface are separated by quantitative mobility spectrum analysis. The analysis shows that two-channel conduction is present in nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrate.