Browsing by Subject "Quality-factor"

Now showing 1 - 2 of 2

Open Access
Implementation of high quality-factor on-chip tuned microwave resonators at 7GHz
(WILEY, 2009) Melik, R.; Demir, Hilmi Volkan
We report on the design, analytical modeling, numerical simulation, fabrication, and experimental characterization of chip-scale microwave resonators that exhibit high quality-factors (Q-factors) in the microwave frequency range. We demonstrate high Q-factors by tuning these microwave resonators with the film capacitance of their LC tank circuits rather than the conventional approach of using external capacitors for tuning. Our chip-scale resonator design further minimizes energy losses and reduces the effect of skin depth leading to high Q-factors even for significantly reduced device areas. Using our new design methodology, we observe that despite the higher resonance frequency and smaller chip size, the Q-factor is improved compared with the previous literature using traditional approaches. For our 540 m 540 m resonator chip, we theoretically compute a Q-factor of 52.40 at the calculated resonance frequency of 6.70 GHz and experimentally demonstrate a Q-factor of 47.10 at the measured resonance frequency of 6.97 GHz. We thus achieve optimal design for microwave resonators with the highest Q-factor in the smallest space for operation at 6.97 GHz.
Open Access
RF-MEMS load sensors with enhanced Q-factor and sensitivity in a suspended architecture
(Elsevier, 2010-11-09) Melik, R.; Unal, E.; Perkgoz, N. K.; Puttlitz, C.; Demir, Hilmi Volkan
In this paper, we present and demonstrate RF-MEMS load sensors designed and fabricated in a suspended architecture that increases their quality-factor (Q-factor), accompanied with an increased resonance frequency shift under load. The suspended architecture is obtained by removing silicon under the sensor. We compare two sensors that consist of 195 μm × 195 μm resonators, where all of the resonator features are of equal dimensions, but one's substrate is partially removed (suspended architecture) and the other's is not (planar architecture). The single suspended device has a resonance of 15.18 GHz with 102.06 Q-factor whereas the single planar device has the resonance at 15.01 GHz and an associated Q-factor of 93.81. For the single planar device, we measured a resonance frequency shift of 430 MHz with 3920 N of applied load, while we achieved a 780 MHz frequency shift in the single suspended device. In the planar triplet configuration (with three devices placed side by side on the same chip, with the two outmost ones serving as the receiver and the transmitter), we observed a 220 MHz frequency shift with 3920 N of applied load while we obtained a 340 MHz frequency shift in the suspended triplet device with 3920 N load applied. Thus, the single planar device exhibited a sensitivity level of 0.1097 MHz/N while the single suspended device led to an improved sensitivity of 0.1990 MHz/N. Similarly, with the planar triplet device having a sensitivity of 0.0561 MHz/N, the suspended triplet device yielded an enhanced sensitivity of 0.0867 MHz/N.