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Browsing by Subject "Power electronics"

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    ItemOpen Access
    Computer-controlled characterization of high-voltage, high-frequency SiC devices?
    (IEEE, 2006) Ortiz-Rodriguez, J. M.; Hefner, A. R.; Berning, D.; Hood, C.; Ölçüm, Selim
    A software-based high-voltage curve tracer application for SiC device characterization is presented. This flexible application interface is developed to define testing parameters needed to control the hardware of a custom-made 25 kV-capable SiC characterization test bed. Data acquisition is controlled for optimum resolution, and I-V characterization is computed by means of a user-defined time interval based on the shape of the applied power pulses. Both voltage and current waveforms are displayed for each data point captured to allow the user to observe transient effects. Additionally, the software allows archiving some or all of these transient waveforms. Acquired results are shown to demonstrate functionality and flexibility of the new system.
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    ItemOpen Access
    Design, fabrication, and characterization of normally-off GaN HEMTS
    (2019-07) Gülseren, Melisa Ekin
    GaN-based high-electron-mobility transistors (HEMTs) have been developing rapidly from the time when they were first demonstrated in the 1990s. They have consistently been presented as a displacement technology to silicon based power devices owing to the superior material properties of GaN such as high-electric breakdown field, high-electron saturation velocity, and high mobility. Normally-off GaN HEMT devices are particularly significant in power electronics applications. In this thesis, a comprehensive study of normally-off high-electron-mobility transistors is presented, including theoretical background review, theoretical analysis, physically-based device simulations, device fabrication and optimization and electrical characterization. p-GaN gate InAlN/GaN HEMT and recessed AlGaN/GaN MISHEMT devices have been successfully demonstrated.

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