Browsing by Subject "Power Amplifier"

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    A ku-band phemt mmic high power amplifier design
    (2014) Değirmenci, Ahmet
    Power amplifiers are regarded as the one of the most important part of the radar and communication systems. In order to satisfy the system specifications, the power amplifiers must provide high output power and high efficiency at the same time. AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (PHEMT) provides significant advantages offering high output power and high gain at RF and microwave frequencies. Considering the electrical performance, cost and the reliability issues, pHEMT monolithic microwave integrated circuit (MMIC) high power amplifiers are one of the best alternatives at Ku-band frequencies (12-18 GHz portion of the electromagnetic spectrum in the microwave range of frequencies). In this thesis, a three-stage AlGaAs/InGaAs/GaAs pHEMT MMIC high power amplifier is developed which operates between 16-17.5 GHz. Based on 0.25 µm gate-length pHEMT process, the MMIC is fabricated on 4-mil thick wafer with the size of 5.5 x 5.7 mm2 . Under 8V drain voltage operation, 26.5-24 dB small signal gain, 10-W (40 dBm) continuous-wave mode output power at 3 dB compression with %25-30 drain efficiency is achieved when the base temperature is 85◦C.
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    X Band GaN Based MMIC power amplifier with 36.5dBm P1-dB for space applications
    (IEEE, 2018) Gürdal, Armağan; Yilmaz, Burak Alptug; Cengiz, Ömer; Şen, Özlem; Özbay, Ekmel
    An X-Band Monolithic Microwave Integrated Circuit (MMIC) High Power Amplifier (HPA) with coplanar waveguide (CPW) based on AIGaN/GaN on SiC technology is presented in this paper. Coplanar waveguide technology (CPW) is chosen for the simplicity and reduced cost of fabrication since CPW process has no via. High Electron Mobility Transistors (HEMTs) are matched for the 8 GHz-8.4GHz frequency band for maximum output power. The Amplifier has a small signal gain over 10 dB, output power of 36.5dBm at 1 dB gain compression point (P1dB) and 40% power added efficiency (P AE) at (PldB) in the desired frequency band (8 GHz-8.4 GHz) with Vds = 30V.